MoS2 BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES
Abstract
The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms.
About the Authors
A. V. Krivosheeva
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. L. Shaposhnikov
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. E. Borisenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
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Review
For citations:
Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E. MoS2 BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES. Doklady BGUIR. 2016;(4):98-101. (In Russ.)
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