FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES
Abstract
The results of study and development of silicon nanowires (SiNWs) formation by metal-assisted chemical etching (MACE) are introduced. Linear dependence of SiNWs length from etching time is established. Total and mirror reflectance spectra, Raman scattering spectra of SiNWs and photoluminescence (PL) spectra are studied. Si band broadening and shifting to short-wave region in Raman spectra with increasing of etching time are revealed.
About the Authors
H. V. Bandarenka
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
K. V. Girel
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
S. A. Niauzorau
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
K. A. Gonchar
Московский государственный университет им. М.В. Ломоносова (физический факультет)
Belarus
Belarus
V. U. Timoshenko
Московский государственный университет им. М.В. Ломоносова (физический факультет)
Belarus
Belarus
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Review
For citations:
Bandarenka H.V., Girel K.V., Niauzorau S.A., Gonchar K.A., Timoshenko V.U. FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES. Doklady BGUIR. 2016;(2):5-10. (In Russ.)
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