EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON
Abstract
ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon.
About the Authors
V. I. Levchenko
ГО «НПЦ НАН Беларуси по материаловедению»
Belarus
Belarus
L. I. Postnova
ГО «НПЦ НАН Беларуси по материаловедению»
Belarus
Belarus
E. L. Trukhanava
ГО «НПЦ НАН Беларуси по материаловедению»
Belarus
Belarus
V. P. Bondarenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
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Review
For citations:
Levchenko V.I., Postnova L.I., Trukhanava E.L., Bondarenko V.P. EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON. Doklady BGUIR. 2015;(6):100-102. (In Russ.)
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