Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET
Abstract
The description of the original integrated approach to solving the problem of statistical analysis in microelectronic products design process from the design of the technological routine to the system design. Testing of this methodology is described by investigating the influence of process parameters on dispersion structural and electrical characteristics of 0.35 micron MOS transistor, and the characteristics of the analog and digital circuit solutions.
About the Authors
T. T. Tran
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. R. Stempitsky
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
S. A. Soroka
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
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Review
For citations:
Tran T.T., Stempitsky V.R., Soroka S.A. Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET. Doklady BGUIR. 2015;(3):83-89. (In Russ.)
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