Synthesis of Silicon Nitride Films with Improved Mechanical and Chemical Properties by ICPCVD Method
https://doi.org/10.35596/1729-7648-2026-24-3-52-60
Abstract
The article presents the results of a study of the residual mechanical stress level and resistance to processing in acid and alkaline etchants of SiNx films obtained by plasma-activated vapor deposition in an inductively coupled plasma reactor. The deposition process was carried out from a SiH4–N2–Ar–He gas mixture at 400–500 °C. Typically, the deposition of dielectric films in high-density plasma is carried out at a pressure in the working chamber in the range of 0.13–4.00 Pa. In the conducted studies, by increasing the pressure to 12–18 Pa, it was possible to significantly reduce the level of residual mechanical stresses in the SiNx films. At the same time, the compact microstructure of the films ensured their high chemical resistance. The refractive index of the films varied from 2.06 to 1.93, depending on the deposition mode. The etching rate of the films in 50 % hydrofluoric acid was 25–32 nm/min, which was comparable to values for nitride films obtained by high-temperature chemical vapor deposition at low pressure. The synthesized SiNx films were also resistant to exposure to a 40 % potassium hydroxide solution at 90 °C.
About the Authors
N. Koval’chuk
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Koval’chuk N., Cand. Sci (Tech.), Associate Professor, Deputy Director – Chief Engineer
Minsk
S. Demidovich
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Demidovich S., Leading Engineer at the Branch Laboratory of New Technologies and Materials
Minsk
L. Vlasukova
Belarusian State University
Belarus
Belarus
Vlasukova Liudmila, Cand. Sci. (Phys. and Math.), Leading Researcher at the Research Laboratory of Materials and Device Structures for Micro- and Nanoelectronics
220045, Minsk, Kurchatova St., 5
Tel.: +375 17 209-59-29
I. Parkhomenko
Belarusian State University
Belarus
Belarus
Parkhomenko I., Cand. Sci. (Phys. and Math.), Leading Researcher at the Research Laboratory of Materials and Device Structures for Micro- and Nanoelectronics
Minsk
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Review
For citations:
Koval’chuk N., Demidovich S., Vlasukova L., Parkhomenko I. Synthesis of Silicon Nitride Films with Improved Mechanical and Chemical Properties by ICPCVD Method. Doklady BGUIR. 2026;24(3):52-60. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-3-52-60
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