Vertical Conductive Transitions in Dielectric Substrates Based on Anodic Aluminum Oxide
https://doi.org/10.35596/1729-7648-2025-23-5-5-11
Abstract
The development of 2.5D and 3D crystal integration technologies imposes increased requirements on the housings of microelectronic products. A promising material for the manufacture of housings is anodic aluminum oxide, which allows the formation of interlayer vertical electrical connections of different layers without additional operations of creating holes in the interlayer insulation. This makes it possible to obtain subsequent layers on the surface with good planarization. The article considers a method for manufacturing substrates from porous anodic aluminum oxide with insulated conductive pads using through local anodizing of aluminum. A metho dology for studying the insulating properties of the obtained dielectric substrates with various methods for improving the quality of insulation of conductive channels is presented. The results of a study of leakage currents of isolated conductive channels depending on the applied voltage are presented.
About the Authors
A. D. Tsaladonov
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Tsaladonov A. D., Master’s Student at the Micro- and Nanoelectronics Department,
Minsk.
D. V. Revenko
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Revenko D. V., Master’s Student at the Micro- and Nanoelectronics Department,
Minsk.
S. A. Biran
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Biran Siarhei Andreevich, Senior Lecturer at the Department of Micro- and Nanoelectronics,
6, P. Brovki St., Minsk, 220013.
Тel.: +375 17 293-88-90
A. V. Korotkevich
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Korotkevich A. V., Cand. Sci. (Tech.), Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics,
Minsk.
P. E. Novikov
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Novikov P. E., Electronics Engineer of the R&D Laboratory “CAD in Micro- and Nanoelectronics Systems”,
Minsk.
K. V. Korsak
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Korsak K. V., Junior Researcher of the R&D Laboratory “CAD in Micro- and Nanoelectronics Systems”,
Minsk.
References
1. Advanced Packaging Market Size, Share & Trends Analysis Report by Packaging Type (Flip-Chip, Fan-Out WLP, Embedded-Die, Fan-In WLP, 2.5D/3D), Application (Consumer Electronics, Automotive, Industrial, Healthcare), Region, with Growth Forecasts, 2025–2030. Available: https://www.researchandmarkets.com/reports/6085858/advanced-packaging-market-size-share-and-trends (Accessed 26 May 2025).
2. Advanced Packaging Market: Global Industry Analysis and Forecast (2024–2030). Available: https://www.maximizemarketresearch.com/market-report/global-advanced-packaging-market/30807/ (Accessed 26 May 2025).
3. Gagarina L. G., Rubtsov Y. V. (2022) Peculiarities of Development of the Method of Classification of Flat QFNCases for Application in the Automated Systems of Technical Preparation of Production of Microelectronics Products. News of Universities. Electronics. 27 (3), 322–332 (in Russian).
4. Hosseinabadi Z., Ramazani A., Almasi M. (2015) KashDeveloping Cu Pore-Filling Percentage in Hard Anodized Anodic Aluminum Oxide Templates with Large Diameters. Materials Chemistry and Physics. 260.
5. Mozalev A., Sakairi M., Takahashi H., Habazaki H., Hubalek J. (2014) Nanostructured Anodic-AluminaBased Dielectrics for High-Frequency Integral Capacitors. Thin Solid Films. 550, 486–494.
Review
For citations:
Tsaladonov A.D., Revenko D.V., Biran S.A., Korotkevich A.V., Novikov P.E., Korsak K.V. Vertical Conductive Transitions in Dielectric Substrates Based on Anodic Aluminum Oxide. Doklady BGUIR. 2025;23(5):5-11. (In Russ.) https://doi.org/10.35596/1729-7648-2025-23-5-5-11
Views:
50
Email this article 