Electrophysical Properties of Structures with Barium Titanate and Oxide Films Formed by the Sol-Gel Method on Titanium
https://doi.org/10.35596/1729-7648-2025-23-3-12-18
Abstract
Aluminum oxide and barium titanate films were formed on titanium and oxidized single-crystal silicon substrates using the sol-gel method. The dependence of the capacitance and the dielectric loss tangent on the frequency of the Al2O3/BaTiO3/Ni capacitor structure was studied in the range of 200 Hz–200 kHz on a titanium substrate using the substrate as the lower electrode. In the high-frequency region (20–200 kHz), the standard deviation of the capacitance was 95–97 pF, and in the low-frequency region (0.2–10.0 kHz), it was 80–94 pF. The capacitance and dielectric loss tangent values remained within the established standard deviation values for a year. Examples of images of microdisks and waveguides obtained by photolithography and chemical etching of structures with Al2O3, SiO2 and BaTiO3 films are given for subsequent development of planar waveguides and electrooptical modulators.
Keywords
About the Authors
R. T. MakhmutovBelarus
Postgraduate at the Department of Micro- and Nanoelectronics
N. V. Gaponenko
Belarus
Dr. Sci. (Phys. and Math.), Professor, Head of the R&D Laboratory “Nanophotonics” (Lab 4.5)
E. I. Lashkovskaya
Belarus
Junior Researcher at the Lab 4.5
K. I. Meledin
Belarus
Postgraduate at the Department of Micro- and Nanoelectronics
I. A. Kashko
Belarus
Researcher at the R&D Laboratory “Integrated Micro- and Nanosystems”
A. D. Malyshev
Belarus
Student
L. V. Sudnik
Belarus
Dr. Sci. (Tech.), Deputy Director for Research at the Research Institute of Pulse Processes with Pilot Production
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Review
For citations:
Makhmutov R.T., Gaponenko N.V., Lashkovskaya E.I., Meledin K.I., Kashko I.A., Malyshev A.D., Sudnik L.V. Electrophysical Properties of Structures with Barium Titanate and Oxide Films Formed by the Sol-Gel Method on Titanium. Doklady BGUIR. 2025;23(3):12-18. (In Russ.) https://doi.org/10.35596/1729-7648-2025-23-3-12-18