Capacitance of Film Structures Including Graphitic Carbon Nitride
https://doi.org/10.35596/1729-7648-2024-22-6-5-13
Abstract
Al/g-C3N4/Si/Al, Al/g-C3N4/SiO2/Si/Al, Al/g-C3N4/Al and Al/g-C3N4/Al2O3/Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C3N4) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO2 or Al2O3 – and Al contacts deposited on the surface. Their capacitance-voltage characteristics and frequency dependence of the capacitance were measured at room temperature. It was found that the permittivity of g-C3N4 is 14 in structures on silicon and 9–10 in structures on aluminum. The decrease in permittivity is explained by the formation of Al2O3 at the g-C3N4/Al boundary during the deposition of g-C3N4, as indicated by the results of the X-ray diffraction analysis of the formed samples.
Supporting agencies: The research was carried out within the framework of task 1.4 of the State Program of Scientific Research of the Republic of Belarus “Materials Science, New Materials and Technologies”. The authors thank D. I. Tishkevich for the X-ray diffraction analysis of the experimental samples.
About the Authors
V. T. Pham
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Pham Van Tung, Postgraduate at the Department of Micro- and Nanoelectronics
220013, Republic of Belarus, Minsk, P. Brovki St., 6
Tel.: +375 25 792-66-37
S. E. Maximov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Maximov S. E., Student
Minsk
E. A. Utkina
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Utkina E. A., Cand. of Sci., Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics
Minsk
E. B. Chubenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Chubenko E. B., Dr. of Sci. (Phys. and Math.), Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics
Minsk
V. E. Borisenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Borisenko V. E., Dr. of Sci. (Phys. and Math.), Professor, Professor at the Department of Micro- and Nanoelectronics
Minsk
References
1. Chen Y., Lu C. (2023) Graphitic Carbon Nitride Nanomaterials for High Performance Supercapacitors. Carbon Neutralization. 2 (5), 585–602. DOI: 10.1002/cnl2.87.
2. Bian J., Li Q., Huang C., Li J., Guo Y., Zaw M., et al. (2015) Thermal Vapor Condensation of Uniform Graphitic Carbon Nitride Films with Remarkable Photocurrent Density for Photoelectrochemical Applications. NanoEnergy. 15, 353–361. DOI: 10.1016/j.nanoen.2015.04.012.
3. Chubenko E. B., Kovalchuk N. G., Komissarov I. V., Borisenko V. E. (2022) Chemical Vapor Deposition of 2D Crystallized g-C<sub>3</sub>N<sub>4</sub> Layered Films. J. Phys. Chem. 126 (9), 4710–4714. DOI: 10.1021/acs.jpcc.1c10561.
4. Ermakova E. N., Maksimovsky E. A., Yushina I. V., Kosinova M. L. (2023) CVD Synthesis of Graphitic Carbon Nitride Films from Melamine. Journal of Inorganic Chemistry. 68 (2), 56–64 (in Russian).
5. Chubenko E. B., Maximov S. E., Bui C. D., Borisenko V. E., Pham V. T. (2023) Rapid Chemical Vapor Deposition of Graphitic Carbon Nitride Films. Materialia. 28. DOI: 10.1016/j.mtla.2023.101724.
6. Bobrova E. A., Omelyanovskaya N. M. (2008) Capacitance-Voltage Characteristics of MOS Structures Caused by Charge in the Oxide. Physics and Technology of Semiconductors. 42 (11), 1380–1383 (in Russian).
7. Tutov E. A., Ryabtsev S. V., Tutov E. E., Bormontov E. N. (2006) Silicon MOS Structures with Nonstoichiometric Metal Oxide Semiconductors. Journal of Technical Physics. 76 (12), 65–68 (in Russian).
8. Vorotylov K. A., Luchnikov P. A., Podgorny V. U., Seregin D. S. (2011) Features of Measuring the Permittivity of Thin Films of MIS Structures. Bulletin of Science of Siberia. 1 (1), 220–228 (in Russian).
9. Patra P. C., Mohapatra Y. N. (2021) Dielectric Constant of Thin Film Graphitic Carbon Nitride (g-C<sub>3</sub>N<sub>4</sub>) and Double Dielectric Al<sub>2</sub>O<sub>3</sub>/g-C<sub>3</sub>N<sub>4</sub>. Appl. Phys. Lett. 118 (10). DOI: 10.1063/5.0045911.
10. Ong W. J., Tan L. L., Ng Y. H., Yong S. T., Chai S. P. (2016) Graphitic Carbon Nitride (g-C<sub>3</sub>N<sub>4</sub>)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer to Achieving Sustainability? Chem. Rev. 116 (12). DOI: 10.1039/D3SU00382E.
Review
For citations:
Pham V.T., Maximov S.E., Utkina E.A., Chubenko E.B., Borisenko V.E. Capacitance of Film Structures Including Graphitic Carbon Nitride. Doklady BGUIR. 2024;22(6):5-13. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-6-5-13
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