Structural Features of Porous Silicon Formed on Heavily Doped Plates of Single-Crystal Silicon with Electron Conductivity | Lopato | Doklady BGUIR

Doklady BGUIR
Doklady BGUIR

eng | рус

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

Preview

Doklady BGUIR

Advanced search

Archives

Download this PDF file

For citations:

Lopato U.P., Laputko D.D., Grevtsov N.L., Bondarenko V.P. Structural Features of Porous Silicon Formed on Heavily Doped Plates of Single-Crystal Silicon with Electron Conductivity. Doklady BGUIR. 2024;22(5):17-25. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-5-17-25

Views: 76

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

* not an advertisement

Indexing Databases

* not an advertisement

Popular articles

Editor-in-Chief

Vadim Bogush

Article Tools

Finding References

Email this article (Login required)

Email the author (Login required)

About the Authors

U. P. Lopato
Belarusian State University of Informatics and Radioelectronics
Belarus

Lopato Ulyana Pavlovna, Master’s Student

220013, Minsk, P. Brovki St., 6

Tel.: +375 17 293-88-54

D. D. Laputko
Belarusian State University of Informatics and Radioelectronics
Belarus

Laputko D. D., Master’s Student

Minsk

N. L. Grevtsov
Belarusian State University of Informatics and Radioelectronics
Belarus

Grevtsov N. L., Researcher at the Scientific Research Laboratory “Materials and Structures of Nanoelectronics” (Lab. 4.3)

Minsk

V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus

Bondarenko V. P., Head of the Lab. 4.3

Minsk

Notifications