Photocurrent in Silic in Silicon/Barium Titanate/Nikel Structures
https://doi.org/10.35596/1729-7648-2024-22-5-12-16
Abstract
Photosensitive silicon/barium titanate/nickel structures with undoped barium titanate and doped europium were synthesized using the sol-gel method. The current-voltage characteristics were studied under illumination with a xenon lamp, highlighting a monochromatic line in the range of 400–800 nm and in dark mode. The synthesized structures showed the presence of a photocurrent on the reverse branch of the current-voltage characteristics over the entire studied range of illumination wavelengths. The maximum reverse branch current for a structure with undoped barium titanate was achieved when exposed to radiation with a wavelength of 470 nm and was about 0.6 μA for a bias voltage ranging from 2 to 10 V. Doping barium titanate with europium leads to an increase in the photocurrent by 17–26 %.
About the Authors
Yu. D. Karnilava
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Karnilava Yu. D., Postgraduate, Junior Researcher at the Scientific Research Laboratory “Nanophotonics” (Lab. 4.5)
Minsk
E. B. Chubenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Chubenko E. B., Cand. of Sci., Leading Researcher at the Scientific Research Laboratory “Materials and Structures of Nanoelectronics”
Minsk
N. V. Gaponenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Gaponenko Nikolai Vasil’evich, Dr. of Sci. (Phys. and Math.), Professor, Head of the Lab. 4.5
20013, Minsk, P. Brovki St., 6
Tel.: +375 17 293-88-75
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Review
For citations:
Karnilava Yu.D., Chubenko E.B., Gaponenko N.V. Photocurrent in Silic in Silicon/Barium Titanate/Nikel Structures. Doklady BGUIR. 2024;22(5):12-16. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-5-12-16
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