Performance Characteristics of an Infrared Photodetector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride
https://doi.org/10.35596/1729-7648-2024-22-3-69-75
Abstract
A simulation procedure for analyzing the electrical and optical characteristics of an AlGaN/GaN intersubbandquantum well middle-wavelength infrared photodetector is presented. The photoconductive gain spectrumwas simulated by coupling the drift-diffusion and capture-escape models in the active region of the devicestructure and by ignoring the contribution of radiative emission. It was shown that the photodetector at zero biasis sensitive over a spectral range from 4 to 6 μm, with the peak absorption occurring at 4.64 μm. The dependenceof the available photocurrent on both the wavelength and the angle of incidence of an unpolarized monochromaticbeam of light was also evaluated. An assessment of the dark current characteristics was estimated at varioustemperatures.
Keywords
infrared radiation,
quantum well,
intersubband transition,
simulation,
capture-escape model,
gallium nitride,
optical gain,
optoelectronics,
absorption,
photodetector
Supporting agencies: This work is supported by the grant 1.4.4 of Belarusian National Scientific Research Program “Digital and Space Technologies, Human and Public Safety and National Security”.
About the Authors
V. S. Volcheck
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Volcheck Vladislav Sergeevich, Junior Researcher at the Scientific Research Laboratory “Computer-Aided Design of Microand Nanoelectronic Systems” (Lab. 4.4) of R&D Department
220013, Minsk, P. Brovki St., 6
Tel.: +375 17 293-84-09
V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Cand. of Sci., Associate Professor, Vice-Rector for Academic Affairs, Advicer of the Lab. 4.4 of R&D Department
220013, Minsk, P. Brovki St., 6
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Review
For citations:
Volcheck V.S., Stempitsky V.R. Performance Characteristics of an Infrared Photodetector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride. Doklady BGUIR. 2024;22(3):69-75. https://doi.org/10.35596/1729-7648-2024-22-3-69-75
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