Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits
https://doi.org/10.35596/1729-7648-2024-22-3-21-27
Abstract
The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of n- and p-channel transistors were selected: drain current from the gate voltage when diode-connected; output characteristics at various gate voltages; drain current from the drain voltage without applying potential to the gate; percentage of yield of suitable products. These parameters were compared with microcircuits manufactured using standard technology. Analysis of the results showed that rapid thermal treatment of the original silicon wafers can significantly improve the above characteristics of n-channel metal-oxide-semiconductor ( n-MOS) and p-channel metal-oxide-semiconductor (p-MOS) transistors by reducing the fixed charge in gate dielectric obtained by pyrogenic oxidation of silicon. This makes it possible to improve the quality of manufactured complementary metal-oxide-semiconductor microcircuits and increase the percentage of yield of suitable products from 74.38 to 77.53 %.
About the Authors
U. A. Pilipenka
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Corresponding Member of the National Academy of Sciences of Belarus, Dr. of Sci. (Tech.), Professor, Deputy Director for Scientific Development of the State Center “Belmicroanalysis”
220108, Minsk, Kazintsa St., 121а
V. A. Saladukha
SSPA “Optics, Optoelectronics, and Laser Technology” of the National Academy of Sciences
Belarus
Belarus
Dr. of Sci. (Tech.), Head of the Center of Micro- and Radioelectronics
Minsk
H. A. Siarheichyk
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Siarheichyk Hanna Alyaksandrayna, Leading Engineer at the State Center “Belmicroanalysis”
220108, Minsk, Kazintsa St., 121а
Tel.: +375 29 999-30-21
D. U. Shestouski
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Leading Engineer-Technologist at the Advanced Technological Processes Department
220108, Minsk, Kazintsa St., 121а
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Review
For citations:
Pilipenka U.A., Saladukha V.A., Siarheichyk H.A., Shestouski D.U. Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits. Doklady BGUIR. 2024;22(3):21-27. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-3-21-27
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