Memristor Effect in Layered Film Structures
https://doi.org/10.35596/1729-7648-2024-22-3-5-13
Abstract
Equivalent electrical circuits of multilayer film structures with memristor switching of resistance at interlayer boundaries and at the boundaries of crystal grains in each layer are proposed. Numerical modeling of the current-voltage characteristics of such structures has shown that their loop-shaped form, typical of memristors, is transformed into a linear ohmic dependence of the total current on the magnitude of the applied external voltage as both the number of layers and the number of grains in each layer increase. A certain combination of the number of layers and grains in a layer has been established, at which the maximum total current flowing through the structure and the ratio of resistances in the “off” and “on” states reach the highest values.
Supporting agencies: The authors thank A. L. Daniluk for usetal discussion of the proposed model and numerical results obtained. The work was performed within the grant of the Belarusian Republican Foundation for Fundamental Research F22-114.
About the Authors
V. T. Pham
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Pham Van Tung, Postgraduate at the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
Tel.: +375 17 293-88-75
D. A. Podryabinkin
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Cand. of Sci., Senior Researcher at the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
E. B. Chubenko
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Cand. of Sci., Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
V. E. Borisenko
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus
Belarus
Dr. of Sci. (Phys. and Math.), Professor, Professor at the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
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Review
For citations:
Pham V., Podryabinkin D.A., Chubenko E.B., Borisenko V.E. Memristor Effect in Layered Film Structures. Doklady BGUIR. 2024;22(3):5-13. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-3-5-13
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