Plasma Systems in Thin Film Technology
https://doi.org/10.35596/1729-7648-2024-22-2-20-31
Abstract
The article discusses the current trends in the development of ion-plasma systems for ion processing and thin film deposition. Application of pulsed reactive magnetron sputtering for deposition of vanadium oxide films and dependence of process parameters on power supply frequency characteristics, peculiarities and application of direct ion-beam deposition for formation of coatings based on SiO2 for optical coatings, SiO2, CH, CN, CHF for orientation coatings of LCD displays, wear-resistant coatings of diamond-like carbon (α-C) and carbon nitride (CNx) are considered. The advantages of continuous microwave magnetron power over pulsed mode are shown. The mathematical model for calculating magnetron sputtering systems, processes of magnetron sputtering and the main capabilities of the developed software complex Deposition are shown.
About the Authors
A. P. DostankoBelarus
Academician at the National Academy of Sciences of Belarus, Dr. of Sci. (Tech.), Professor, Principal Researcher at the Center “Ion Plasma Systems and Technologies” (Center 2.1) of R&D Department, Belarusian State University of Informatics and Radioelectronics
S. I. Madveyko
Belarus
Cand. of Sci., Associate Professor, Head of the Department of Electronic Engineering and Technology
E. V. Telesh
Belarus
Senior Lecturer at the Department of Electronic Engineering and Technology
S. N. Melnikov
Belarus
Cand. of Sci., Senior Researcher at the Center 2.1 of R&D Department
S. M. Zavadski
Belarus
Zavadski Sergey Mikhaylovich, Cand. of Sci., Associate Professor, Head of the Center 2.1 of R&D Department
220013, Minsk, P. Brovki St., 6
Tel.: +375 17 293-80-79
D. A. Golosov
Belarus
Cand. of Sci., Associate Professor, Senior Researcher at the Center 2.1 of R&D Department
References
1. Kelly P. J., Arnell R. D. (2000) Magnetron Sputtering: A Review of Recent Developments and Applications. Vacuum. 56, 159–172.
2. Sproul W. D. (1998) High-Rate Reactive DC Magnetron Sputtering of Oxide and Nitride Supperlattice Coatings. Vacuum. 51 (4), 641–646.
3. Dostanko A. P., Zalessky V. G., Rusetsky A. M., Lanin V. L., Petukhov I. B., Golosov D. A., et al. (2009) Technological Processes and Systems in Microelectronics: Plasma, Elektron-Ion-Beam, Ultrasonic. Minsk, Bestprint Publ. (in Russian).
4. Dostanko A. P., Rusetsky A. M., Bordusov S. V., Lanin V. L., Anufriev L. P., Karpovich S. V. (2011) Electrophysical Processes and Equipment in Micro- and Nanoelectronics Technology. Minsk, Bestprint Publ. (in Russian).
5. Chapman В. (1980) Glow Dischange Processesn. NY, Wiley Publ.
6. Tachi Sh. (2003) Impact of Plasma Processing on Integrated Circuit Technology Migration: From 1 mm to 100 nm and Beyond. Journal of Vacuum Science Technology. 21 (5), S131–S138.
7. MeŠkinis Š., Gudaitis R., Tamulevičius S., Kopustinskas V., Andrulevičius M. (2009) Dielectric Properties of the Ion Beam Deposited SiOx Doped DLC Films. Material Sci. 15 (1), 3–6.
8. Telesh E. V., Dostanko A. P. (2014) Application of a Secondary Discharge in an Accelerator with an Anode Layer for the Formation of Optical Coatings from Silicon Dioxide. Contentant. 13 (2), 31–33 (in Russian).
9. Telesh E. V., Kasinsky N. K. (2014) Formation of Optical Coatings by Direct Deposition from Ion Beams. Contentant. 1 (2), 27–30 (in Russian).
10. Telesh E. V., Dostanko A. P., Vashurov A. Y. (2015) Optical Performances of Silicon Dioxide Thin Films Received by Direct Deposition from Ion Beams. Doklady BGUIR. 8 (94), 81–85 (in Russian).
11. Tsikhan O. I., Madveika S. I., Bordusau S. V. (2021) Study of Pulsed and Continuous Modes of Microwave Discharge Plasma Generation on a Resonator-Type Plasmatron. High Temperature Material Processes. 25 (2), 65–75.
12. Tsikhan O. I., Madveika S. I., Bordusau S. V. (2023) Adjustable Three-Phase Power Supply for a Microwave Magnetron Operating on a Plasma Load. Useful. Model BY. Published 28.02.2023 (in Russian).
13. Tsikhan O. I., Madveika S. I., Bordusau S. V. (2022) The Study of the Microwave Magnetron Pulse Power Supply Electrical Parameters Influence on the Microwave Discharge Plasma Generation Modes. Problems of Physics, Mathematics and Technics. 52 (3), 42–47 (in Russian).
14. Danilin B. S., Kireev V. Yu. (1987) Application of Low-Temperature Plasma for Etching and Cleaning of Materials. Moscow, Energoatomizdat Publ. (in Russian).
15. Einspruck N., Brown D. (ed.) (1987) Plasma Technology in VLSI Production. Moscow, Mir Publ. (in Russian).
16. Fonash S. J. (1999) Plasma Processing Damage in Etching and Deposition. IBM J. Res. Develop. 43 (12), 103–106.
17. Golosov D. A., Zavadsky S. M., Melnikov S. N. (2013) End-to-End Modeling of Coating Processes Using Magnetron Sputtering. Vestnik of Polotsk State University. Series S: Fundamental Sciences. Physics. (4), 75–82 (in Russian).
Review
For citations:
Dostanko A.P., Madveyko S.I., Telesh E.V., Melnikov S.N., Zavadski S.M., Golosov D.A. Plasma Systems in Thin Film Technology. Doklady BGUIR. 2024;22(2):20-31. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-2-20-31