Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction
https://doi.org/10.35596/1729-7648-2023-21-5-20-24
Abstract
In this paper, the patterns of manifestation of weak localization and antilocalization in graphene with enhanced spin-orbit interaction, as well as in a topological insulator with a gap in surface states induced by magnetic impurities are studied. The parameters characterizing the manifestation of weak localization, antilocalization and crossover between them are established. Quantum corrections to the conductivity of graphene are determined in units of e2/h = 38.64 μS for various ratios between the characteristic dephasing time and spin-orbit scattering time. It has been established that with a relatively long spin-orbit scattering time, not less than 10–10 s, it does not affect the correction to conductivity and its value is determined by the dephasing time and the times of intervalley and intravalley scattering. The effect of the spin-orbit scattering is to suppress weak antilocalization. It leads to a spin flip of the conduction electron during elastic scattering, and the interference pattern of weak localization becomes more complicated due to the mixing of spin states. The sign of the quantum correction depends on which spin state contributes the most.
Keywords
graphene,
transition metal dichalcogenides,
topological insulators,
weak localization,
antilocalization,
magnetoresistance,
spin-orbit interaction,
Berry phase
Supporting agencies: The work was supported financially by the Belarusian Republican Foundation for Fundamental Research (grant Ф23МЭ-038).
About the Authors
U. A. Zaitsau
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Zaitsau Uladzimir Alexandrovich, Postgraduate at the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
Tel.: +375 17 293-22-24
D. A. Podryabinkin
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Denis A. Podryabinkin, Cand. of Sci., Senior Researcher at the Center for Nanoelectronics and New Materials of R&D Department
Minsk
V. V. Melnikova
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Violetta V. Melnikova, Master’s Student at the Department of Micro- and Nanoelectronics
Minsk
A. L. Danilyuk
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Alexander L. Danilyuk, Cand. of Sci., Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics
Minsk
S. L. Prischepa
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Serghej L. Prischepa, Dr. of Sci. (Phys. and Math.), Professor, Professor at the Department of Information Security
Minsk
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Review
For citations:
Zaitsau U.A., Podryabinkin D.A., Melnikova V.V., Danilyuk A.L., Prischepa S.L. Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction. Doklady BGUIR. 2023;21(5):20-24. (In Russ.) https://doi.org/10.35596/1729-7648-2023-21-5-20-24
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