Formation and Properties of Heterosystems Based on Porous Silicon, Graphitic Carbon Nitride and Semiconductor Compounds
https://doi.org/10.35596/1729-7648-2022-20-4-53-61
Abstract
The possibility of pyrolytic synthesis of composite heterosystems based on macroporous silicon, graphitic carbon nitride and wide band semiconductors zinc oxide and zinc sulfide (g-C3N4/ZnO/ZnS) from a mechanical mixture of thiourea and zinc acetate at 500 – 600 °C was shown. The obtained material study by scanning electron microscopy and energy dispersive X-ray spectroscopy showed a uniform filling of macroporous silicon with the composite g-C3N4/ZnO/ZnS with the formation of a continuous composite film on the surface. The photoluminescence of the samples was controlled by the synthesis temperature. Increase of photoluminescence leads to shift of luminescence maximum in high energy range from 544 to 516 nm. It was found that photocatalytic activity of composite heterosystems obtained at a lower temperature is higher due to more developed surface morphology and smaller bandgap width. The materials obtained can be used to create photocatalytic coatings and functional layers of optoelectronic devices.
Keywords
graphitic carbon nitride,
zinc oxide,
zinc sulfide,
macroporous silicon,
photoluminescence,
photocatalysis,
scanning electron microscopy,
water purification
Supporting agencies: The work was carried out as part of task 1.4 of the State Scientific Research Institute of the Republic of Belarus “Material Science, New Materials and Technologies” andagrant of the Ministry of Education for master students. The authors also express their gratitude to D. Zhigulin for conducting study of the samples by scanning electron microscopy and energy dispersive X-ray spectroscopy.
About the Authors
V. P. Grebnev
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Grebnev Vadim Petrovich, Master’s Student at the Microand Nanoelectronics Departament
220013, Minsk, P. Brovka St., 6
tel. +375-29-821-80-89
E. B. Chubenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Cand. of Sci., Associate Professor, Leading Researcher of R&D Laboratory 4.3
Minsk
V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Cand. of Sci, Associate Professor, Head of Laboratory 4.3
Minsk
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Review
For citations:
Grebnev V.P., Chubenko E.B., Bondarenko V.P. Formation and Properties of Heterosystems Based on Porous Silicon, Graphitic Carbon Nitride and Semiconductor Compounds. Doklady BGUIR. 2022;20(4):53-61. (In Russ.) https://doi.org/10.35596/1729-7648-2022-20-4-53-61
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