Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide
https://doi.org/10.35596/1729-7648-2021-19-8-68-71
Abstract
Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.
About the Authors
S. A. BiranBelarus
Sergey А. Biran – Deputy Dean of the Faculty of Radioengineering and Electronics
220013, Republic of Belarus, Minsk, P. Brovka St., 6, Belarusian State University of Informatics and Radioelectronics
D. A. Korotkevich
Belarus
Dmitriy А. Korotkevich – Assistant at the Department of Electronics
Minsk
A. V. Korotkevich
Belarus
Alexander V. Korotkevich – PhD., Associate Professor, Dean of the Faculty
Minsk
K. V. Garifov
Belarus
Kirill V. Garifov – Undergraduate at the Department of Micro- and Nanoelectronics
Minsk
A. D. Dashkevich
Belarus
Anton D. Dashkevich – Undergraduate at the Department of Micro- and Nanoelectronics
Minsk
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Review
For citations:
Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D. Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide. Doklady BGUIR. 2021;19(8):68-71. https://doi.org/10.35596/1729-7648-2021-19-8-68-71