For citations:

Volcheck V.S., Stempitsky V.R. Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material. Doklady BGUIR. 2021;19(6):74-82. (In Russ.) https://doi.org/10.35596/1729-7648-2021-19-6-74-82