Electrophysical properties of vanadium oxide films deposited by reactive magnetron sputtering
https://doi.org/10.35596/1729-7648-2020-18-6-94-102
Abstract
The aim of this work was to study the effect of the gas composition during sputtering on the electrophysical properties of vanadium oxide films deposited by pulsed reactive magnetron sputtering of a vanadium target in an Ar/O2 medium of working gases.
The dependences of the magnetron discharge voltage, deposition rate, resistivity, temperature coefficient of resistance (TCR), and the band gap of vanadium oxide films on the oxygen concentration in the gas mixture are obtained. It was found that amorphous films of vanadium oxide are formed during reactive magnetron sputtering. It is shown that the properties of the deposited vanadium oxide films have a strong dependence on the oxygen concentration in the Ar/O2 gas mixture, which is associated with the formation of a mixture of various intermediate vanadium oxides in the film. It was found that from the point of view of using vanadium oxide films as thermosensitive layers of microbolometers, the films must be deposited at oxygen concentrations in the gas mixture of 17 to 25 %. At the given oxygen concentrations without heating the substrates, vanadium oxide films with a resistivity (0.6–4.0)·10-2 Ohm·m, TCR 2.2–2.3%/°C and a band gap for direct transitions of 3.7–3.78 eV. The obtained characteristics make it possible to use these films as thermosensitive layers of microbolometers.
About the Authors
T. D. Nguen
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
PG student of Electronic Technique and Technology Department
Minsk
A. I. Zanko
JSC “Integral” – “Integral” Holding Managing Company
Belarus
Belarus
Process Engineer
Minsk
D. A. Golosov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Golosov Dmitriy Anatol’evich, PhD, Associate Professor, Leader Researcher of Center 9.1 of R&D Department
220013, Republic of Belarus, Minsk, P. Brovki str., 6
tel. +375-29-671-35-43
S. M. Zavadski
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
PhD, Associate Professor, Head of Center 9.1 of R&D Department
Minsk
S. N. Melnikov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
PhD, Leader Researcher of Center 9.1 of R&D Department
Minsk
V. V. Kolos
JSC “Integral” – “Integral” Holding Managing Company
Belarus
Belarus
Deputy Head of the Industry Laboratory of New Technologies and Materials
Minsk
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Review
For citations:
Nguen T.D., Zanko A.I., Golosov D.A., Zavadski S.M., Melnikov S.N., Kolos V.V. Electrophysical properties of vanadium oxide films deposited by reactive magnetron sputtering. Doklady BGUIR. 2020;18(6):94-102. (In Russ.) https://doi.org/10.35596/1729-7648-2020-18-6-94-102
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