Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030

The aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultiplier tubes. The amplifier is called ADPreampl3. The parameters were measured on a small batch of chips in the amount of 20 samples. In the process of measuring the main parameters of the amplifier, the signal from the SiPM Photonique equivalent circuit was fed to the amplifier input. In the course of measuring the parameters, it was revealed that the spread of the baseline level for the FOut output ranged from -24 to 276 mV with an average value of 85.6 mV. In this case, a voltage changing in the FOoutShift node from -3 to 3 V is sufficient to establish a base level value of FOut output close to zero. When the recovery scheme is disabled, the spread of the basic level for OutA output is from 300 to 800 mV. When the OutAShift output is connected to the zero-voltage bus the average base level for OutA output is 3.72 mV and for OutAinv output it is minus 2.42 mV. The base level at the outputs OutA and OutAinv smoothly changes in the range of ± 0.9 V. At maximum gain, the dynamic range of ADPreampl3 exceeds 20 dB, however, at the same time, the conversion coefficient depends on the value of the input charge. To register large input charges, it is recommended to reduce the output pulse by reducing the voltage at the Gain pin or process the signal from the FOut pin. The output parameters of the experimental samples are compared with the results of computer simulation. The discrepancy between the results of modeling and measurements, peak time and propagation delays of the amplifier signal was revealed. Based on this, a decision to adjust the SPICE parameters of the elements used in the simulation was made.

1. Paternoster G., Ferrario L., Acerbi F., Gola A.G., Bellutti P. Silicon Photomultipliers Technology at Fondazione Bruno Kessler and 3D Integration Perspectives. ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). 2019:50-53. DOI: 10.1109/ESSDERC.2019.8901738.

2. Jiang W, Chalich Y, Deen MJ. Sensors for Positron Emission Tomography Applications. Sensors. 2019;19(22):5019 DOI:10.3390/s19225019.

3. Goertzen A. L., Zhang X., McClarty M. M., Berg E. J., Liu C., Kozlowski P., Retiere F., Ryner L., Sossi V., Stortz G., Thompson C. J. Design And Performance of a Resistor Multiplexing Readout Circuit for a Sipm Detector. IEEE Transactions on Nuclear Science. 2013;60(3):1541-1549. DOI: 10.1109/TNS.2013.2251661.

4. Dey S., Myers E., Lewellen T.K., Miyaoka R.S., Rudell J.C. A Row-Column Summing Readout Architecture for Sipm Based Pet Imaging Systems. 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC). 2013:1-5. DOI: 10.1109/NSSMIC.2013.6829062.

5. Gundacker S., Auffray E., Frisch B., Hillemanns H., Jarron P., Meyer T., Pauwels K., Lecoq P. A Systematic Study to Optimize Sipm Photodetectors for Highest Time Resolution in Pet. IEEE Transactions on Nuclear Science. 2012;59(5):1798-1804. DOI: 10.1109/TNS.2012.2202918

6. Seitz B., Stewart A.G., O'Neill K., Wall L., Jackson C. Performance Evaluation of Novel Sipm for Medical Imaging Applications. 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC). 2013:1-4. DOI: 10.1109/NSSMIC.2013.6829685.

7. Sabet H., Prekas G., Breen M., Bhandari H.B., Nickerson P., Derderian G., Robertson F., Kudrolli H., Cool S. High-Performance and Cost-Effective Detector Using Microcolumnar Csi:Tl and SiPM. IEEE Transactions on Nuclear Science. 2012;59(5):1841-1849. DOI: 10.1109/TNS.2012.2202248.

8. Dvornikov O.V., Tchekhovski V.A., Prokopenko N.N., Galkin Y.D., Kunts A.V., Bugakova A.V. [Implementation of Reading Electronics of Silicone Photomultipliers on the Array Chip МН2ХА030]. Vestnik NTUU «KPI». Seriia Radiotekhnika. Radioapparatastroenie = Visnyk NTUU KPI. Seriia Radiotekhnika. Radioaparatobuduvannia. 2019;78:60-66. DOI: 10.20535/RADAP.2019.78.60-66. (In Russ.)

9. Dvornikov O.V., Tchekhovski V.A., Dziatlau V.L. [Registration Means of low intensity pulsed visible radiation. Part 1. Features and capabilities of multichannel photodetectors with internal amplification]. Pribory I Metody Izmerenii = Devices and Methods of Measurements. 2012;2(5):5-13. (In Russ.)

10. Dvornikov O.V., Tchekhovski V.A., Dziatlau V.L. [Registration Means of low intensity pulsed visible radiation. Part 2. Pre-processing of signals from silicon photomultiplier tubes. Overview]. Pribory i metody izmerenii = Devices and Methods of Measurements. 2013;1(6):5-13. (In Russ.)

11. Dvornikov O.V., Prokopenko N.N., Tchekhovski V.A., Galkin Y.D., Titov A.E., Bugakova A.V. [Silicon Photomultipliers' Analog Interface with Wide Dynamic Range]. 2019 IEEE East-West Design & Test Symposium (EWDTS). 2019:1-2. DOI: 10.1109/EWDTS.2019.8884430.

12. Dvornikov O.V., Tchekhovski V.A., Dziatlau V.L., Prokopenko N.N., Bugakova A.V. BiJFet Array Chip MH2XA030 - a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits. 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech). 2018:13-17. DOI: 10.1109/EExPolytech.2018.8564415.