THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
https://doi.org/10.35596/1729-7648-2019-126-8-141-148
Abstract
The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Formulas are presented that allow modeling of the main electron scattering intensities in a single layer of graphene placed on a substrate of boron nitride. The dependences of the scattering intensity on optical phonons associated with the interface between graphene and a layer of hexagonal boron nitride are obtained when the thickness of the gap between these layers changes. Simulation of fixed rate dispersion was carried out as for normal temperature equal to 300 K and at elevated – equal to 370, which is connected with the necessity of considering the temperature rise of the graphene layer with increasing electron energy. The analysis of the obtained dependences showed that at electron energy values that exceed a value equal to approximately 0.165 eV, there is a predominance of electron scattering on optical phonons inherent in the inner layer of graphene, electron-electron scattering, as well as scattering on optical phonons associated with the interface between graphene and a layer of hexagonal boron nitride, over other types of scattering. At low energy values, which are less than about 0.03 eV, the dispersion on impurities prevails over other types of dispersion. Based on the obtained dependences of electron scattering intensities in graphene, it becomes possible to implement the Monte – Carlo statistical method to determine the characteristics of electron transfer in semiconductor devices containing layers of graphene and hexagonal boron.
About the Authors
V. V. Muraviev
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Member-corr. of NAS of Belarus, Professor, D.Sci.
220012, Minsk, P. Brovki st., 6
V. N. Mishchenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Mishchenka Valery Nikolaevich, PhD, Associate Professor
220012, Minsk, P. Brovki st., 6
References
1. Stolyarov M., Liu G., Shur M., Balandin A. Suppression of 1/f in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors. Applied Physics Letters. 2015;107:023106. DOI.org/10.1063/1.4926872.
2. Lee K.H., Shin H.J., Lee J., Lee I.Y., Kim G.H., Choi J.Y., Kim S.W. Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics. Nano Letters. 2012;12:714. DOI.org/10.1021/nl203635v.
3. Svintsov D.A, Vyurkov V., Lukichev V.F., Orlikovsky A.A., Burenkov A., Ohsner R. [Tunneling field effect transistors based on graphene]. Phisika i technika polyprovodnikov=Physics and Technology of Semiconductors. 2013;47(2):224-250. DOI: 10.1103/PhysRevB.82.115452. (In Russ.)
4. Aniruddha K., Tian F., Debdeep J. Effect of high-k date dielectrics on change transport in grapheme-based field effect transistors. Physical Review. 2010;82:1154520. DOI: 10.1103/PhysRevB.82.115452.
5. Perebeinos V., Avouris P. Inelastic Scattering and Current Saturation in Graphene. Physical Review. 2010; 81:195442. DOI.org/10.1103/PhysRevB.81.195442.
6. Yamoah M.A., Yang W., Pop E., Goldhaber-Gordon D. High Velosity in Graphene Encapsulated by Hexagonal Boron Nitride. Nano. 2017;11:9914-9919. DOI: 10.1021/acsnano.7b03878.
7. Hwang C., Siegel D., Mo S., Regan W., Ismach A., Zhang Y., Zettl A., Lanzara A. Fermi Velosity Engineering in Graphene by Substrate Modification. Scientific reports. 2012;2:590. DOI:10.1038/srep00590.
8. Jyotsna C., Jing G. High-field transport and velocity saturation in graphene. Applied Physics Letters. 2009; 95:023120. DOI.org/10.1063/1.3182740.
9. Tian F., Aniruddha K., Huili X., Debdeep J. High-field transport in two-dimensional graphene. Physical Review. 2011;84:125450. DOI: 10.1103/PhysRevB.84.125450.
10. Moško M., Moškova A. Ensemble Monte Carlo simulation of electron-electron scattering: Improvement of conventional methods. Physical Review. 2010;4(19):10794-10803.
11. Li X., Barry E.A., Zavada J.M., Nardelli Buongiorno M., Kim K. W. Influence of electron-electron scattering on transport characteristics in monolayer grapheme. Applied Physics Letters. 2010;97:08210. DOI.org/10.1063/1.3483612.
12. Goodnick S.M., Lurgi P. Effect of electron-electron scattering on non-equilibrium transport in quantum- well system. Physical Review. 1988;7(5):2578-2588. DOI.org/10.1103/PhysRevB.37.2578.
13. Muravyov V.V., Mishchenkа V.N. [Determination of the electron scattering intensities in a single graphene layer]. Doklady BGUIR=Doklady BGUIR. 2017;108(6):128-129. (In Russ.)
14. Santos E.J.G., Kaxiras E. Electric-Field Dependence of the Effective Dielectric Constant in Graphene. Nano Letters. 2013;13(5):898-902. DOI.org/10.1021/nl303611v.
Review
For citations:
Muraviev V.V., Mishchenko V.N. THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE. Doklady BGUIR. 2019;(7-8):141-148. (In Russ.) https://doi.org/10.35596/1729-7648-2019-126-8-141-148
Views: 538
Email this article 