AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES
https://doi.org/10.35596/1729-7648-2019-125-7-144-151
Abstract
on the layer thickness was observed. The minimal obtained dislocations density values for 1.25μm-thick AlN layer were nedges = 5.9×109 cm-2 and nscrew = 2.2×107 cm-2 for edge and screw dislocations respectively. As a result of optimization of the AlGaN growth temperature, a series of 0.15μm-thick layers was grown, which showed stimulated emission at wavelengths λ = 330 nm, 323 nm, 303 nm, and 297 nm with threshold power
densities of 0.7 MW/cm2, 1.1 MW/cm2, 1.4 MW/cm2 and 1.4 MW/cm2, respectively. The determined optimal epitaxy conditions for AlN and AlGaN layers were used to grow the AlGaN/GaN high electron mobility transistor structure on a sapphire substrate with two-dimensional electron gas, which had a mobility of 1950 cm2/(Vs) at a concentration of 1.15×1013 cm-2. The obtained results are important for creating of nitride-based
UV-emitting optoelectronic semiconductor devices, as well as high-power and high-frequency electronic devices.
For citations:
Rzheutski M.V., Solovjov J.A., Vainilovich A.G., Svitsiankou I.Ya., Pyatlitski A.N., Zhyhulin D.V., Lutsenko E.V. AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES. Doklady BGUIR. 2019;(7 (125)):144-151. (In Russ.) https://doi.org/10.35596/1729-7648-2019-125-7-144-151