STRUCTURE AND techological improvments of tmbs diodes
Abstract
An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.
About the Authors
V. S. Kotov
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
N. F. Golubev
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. E. Borisenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
References
1. Max Chen, Henry Kuo, Sweetman Kim // Power Electronics Technology. 2006. P.22-32.
2. Davide Chiola, Marina del Rey. Recessed termination for trench Schottky device without junction curvature / Патент США №7466005 B2
3. Н. Голубев, В. Токарев, С. Шпаковский // Силовая электроника. 2005. №3. С. 30-33
Review
For citations:
Kotov V.S., Golubev N.F., Borisenko V.E. STRUCTURE AND techological improvments of tmbs diodes. Doklady BGUIR. 2013;(5):12-16. (In Russ.)
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