Formation of titanium oxide thin films by reactive magnetron sputtering
https://doi.org/10.35596/1729-7648-2019-123-5-87-93
Abstract
The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O2 gas mixture during film deposition were established. Films with a dielectric constant of 20-30 units, a dielectric loss tangent of 0,02, a band gap of 3,82 eV, a leakage current density of less than 1,0 A/cm2 at an electric field strength of 2,0*106 V/cm, were obtained.
About the Authors
N. Villa
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
Villa Nomar - PG student of Belarusian state university of informatics and radioelectronics.
220013, Minsk, P. Brovki st., 6, tel. +375-17-293-80-79
D. A. Golosov
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
PhD, associate professor, senior researcher of Center 9.1 of Belarusian state university of informatics and radioelectronics.
220013, Minsk, P. Brovki st., 6
T. D. Nguyen
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
PG student of Belarusian state university of informatics and radioelectronics.
220013, Minsk, P. Brovki st., 6
References
1. Preparation and properties of amorphous TiO2 thin films by plasma enhanced chemical vapor deposition / W.G. Lee [et al.] // Thin Solid Films. 1994. Vol. 237. P. 105-111.
2. Yeung K.S., Lam Y.W. A simple chemical vapour deposition method for depositing thin TiO2 films // Thin Solid Films. 1993. Vol. 109. P. 169-178.
3. Investigations of TiO2 films deposited by different techniques / K. Bange [et al.] // Thin Solid Films. 1991. Vol. 197. P. 279-285.
4. Review and perspective of high-k dielectrics on silicon / S. Hall [et al.] // J. of Telecomunications and Information Technology. 2007. Vol. 2. P. 33-43.
5. Naganuma Y., Tanaka S., Kato C. Preparation of sol-gel derived titanium oxide thin films using vacuum ultraviolet irradiation with a xenon excimer lamp // Jap. J. Appl. Phys. 2004. Vol. 43. P. 6315-6318.
6. Lee Y.H., Chan K.K, Brady M.J. Plasma enhanced chemical vapor deposition of TiO2 in microwave-radio frequency hybrid plasma reactor // J. Vac. Sci. Technol. 1995. Vol. A 13. P. 596-601.
7. Influence of oxygen pressure on the optical properties of TiO2 films deposited with IBS ion-assisted technique / C. Zhu [et al.] // J. of Xi’an Technol. University. 2008. Vol. 28, No. 6. P. 511-515.
8. Influence of oxygen on the morphological and structural properties of Ti thin films grown by ion beam-assisted deposition / J.M. Lopez [et al.] // Thin Solid Films. 2001. Vol. 384. P. 69-75.
9. High-k (k = 30) amorphous hafnium oxide films from high rate room temperature deposition / F.M. Li [et al.] // Appl. Phys. Lett. 2011. Vol. 98. P. 252903-1-3.
10. Annealing effects of HfO2 gate thin films formed by inductively coupled sputtering technique at room temperature / W.J. Choi [et al.] // J. Korean Phys. Soc. 2004. Vol. 45. P. S716-S719.
11. Treichel O., Kirchhoff V. The influence of pulsed magnetron puttering on topography and crystallinity of TiO2 films on glass // Surface and Coatings Technology. 2000. Vol. 123. P. 268-272
12. Han Y.H., Jung S.J., Lee J.J. Deposition of TiO2 Films by reactive Inductively Coupled Plasma assisted DC magnetron sputtering for high crystallinity and high deposition rate // Surf. Coat. Technol. 2007. Vol. 201. P. 5387-5391.
13. Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target / A.P. Dostanko [et al.] // Semiconductors. 2014. Vol. 48, No. 9. P. 1242-1247.
Review
For citations:
Villa N., Golosov D.A., Nguyen T.D. Formation of titanium oxide thin films by reactive magnetron sputtering. Doklady BGUIR. 2019;(5):87-93. (In Russ.) https://doi.org/10.35596/1729-7648-2019-123-5-87-93
Views: 3825
Email this article 