The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters
Abstract
The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of PtSi–Si, and also obtaining as a result of treatment a less defective and equilibrium structure of the barrier layer, to raise barrier height from 0,804 to 0,825 V, to reduce leakage current from –4,42·10-6 to –2,85·10-6 A and in 1,25 times and to raise the reliability of Schottky diodes at operating temperature 125 °C.
About the Authors
V. A. Saladukha
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
PhD, general manager
Belarus
PhD, general manager
V. A. Pilipenko
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
Belarus
Pilipenka Uladzimir Aleksandrovich - D.Sci, professor, corresponding member of the National academy of sciences of Belarus, deputy director of science development of state center «Belmicroanalysis»
220108, Minsk, Kazintsa st., 121A
tel. +375-17-212-37-41
V. A. Gorushko
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
leading engineer of state center «Belmicroanalysis»
Belarus
leading engineer of state center «Belmicroanalysis»
V. A. Philipenya
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
leading engineer of state center «Belmicroanalysis»
Belarus
leading engineer of state center «Belmicroanalysis»
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Review
For citations:
Saladukha V.A., Pilipenko V.A., Gorushko V.A., Philipenya V.A. The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters. Doklady BGUIR. 2019;(1):62-67. (In Russ.)
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