Electrochemical alumina technology for power electronics devices
Abstract
The electrochemical alumina technology (ELAT) for the formation of heat-conducting aluminum substrates with a dielectric layer of anodic aluminum oxide with breakdown voltages above 6 kV is discussed. The developed technology can be used in the production of any electronic device operated in the temperature range from 10 to 473 K and frequencies of the gigahertz range.
About the Authors
D. L. Shimanovich
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
Shimanovich Dimitry Leonidovich - head of the laboratory
220013, Republic of Belarus, Minsk, Brovki, 6
tel. 375-17-293-88-50
V. A. Yakovtseva
Belarusian state university of informatics and radioelectronics
Belarus
PhD, leading researcher
Belarus
PhD, leading researcher
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Review
For citations:
Shimanovich D.L., Yakovtseva V.A. Electrochemical alumina technology for power electronics devices. Doklady BGUIR. 2019;(3):5-11. (In Russ.)
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