bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИРbsuir-913Research ArticleСтатьиANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTUREVelichkoO. I.velichkomail@gmail.comAksenovV. V.noemail@neicon.ruBelarusian State University of Informatics and RadioelectronicsBelarus201703062019072024Copyright © Velichko O.I., Aksenov V.V., 20192019Velichko O.I., Aksenov V.V.Velichko O.I., Aksenov V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/913

The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation of the typical distribution of point defects in the 2-layer structure was carried out.

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The authors declare that there are no conflicts of interest present.