Since the built-in flash-memory microcontroller is an installed program code, we performed an analysis of its resistance to ESD. It was found that the code is damage when exposed to ESD voltage of less critical by 3.06%. This can lead to incorrect triggering and implementing programmed functions. It was determined that changes in the code is not only due to effective protection from exposure to pulsed discharges of static electricity, as well as the number of impacts. Effects caused by exposure to ESD MC were identified by dividing the test on the IC functional blocks and proposed methods of functional control of the MC. Procedure was developed for determining conservation performance IC, based on applying the most efficient model with optimized parameters. It was proved that this method is more efficient and perfect in the consideration of functional units, and allows to define the scope of preserving the integrity of semiconductor structures when exposed to ESD.