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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-622</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ФОРМИРОВАНИЕ КРЕМНИЕВЫХ НАНОНИТЕЙ МЕТОДОМ МЕТАЛЛ-СТИМУЛИРОВАННОГО ХИМИЧЕСКОГО ТРАВЛЕНИЯ И ИССЛЕДОВАНИЕ ИХ ОПТИЧЕСКИХ СВОЙСТВ</article-title><trans-title-group xml:lang="en"><trans-title>FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бондаренко</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Bandarenka</surname><given-names>H. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гирель</surname><given-names>К. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Girel</surname><given-names>K. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Невзоров</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Niauzorau</surname><given-names>S. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гончар</surname><given-names>К. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Gonchar</surname><given-names>K. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тимошенко</surname><given-names>В. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Timoshenko</surname><given-names>V. U.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><aff xml:lang="ru" id="aff-2"><institution>Московский государственный университет им. М.В. Ломоносова (физический факультет)</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>2</issue><fpage>5</fpage><lpage>10</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Бондаренко А.В., Гирель К.В., Невзоров С.А., Гончар К.А., Тимошенко В.Ю., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Бондаренко А.В., Гирель К.В., Невзоров С.А., Гончар К.А., Тимошенко В.Ю.</copyright-holder><copyright-holder xml:lang="en">Bandarenka H.V., Girel K.V., Niauzorau S.A., Gonchar K.A., Timoshenko V.U.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/622">https://doklady.bsuir.by/jour/article/view/622</self-uri><abstract><p>Представлены результаты исследования особенностей формирования и оптических свойств кремниевых нанонитей (КН), формируемых методом металл-стимулированного химического травления (МСХТ) монокристаллического кремния дырочного и электронного типа проводимости. Установлено, что с увеличением времени химического травления длина КН линейно возрастает. Исследованы спектры полного и зеркального инфракрасного (ИК) отражения, спектры комбинационного рассеяния (КР) света сформированных КН, а также спектры фотолюминесценции (ФЛ). Выявлено, что полоса кремния в спектре КР с увеличением времени химического травления расширяется и сдвигается в коротковолновую область.</p></abstract><trans-abstract xml:lang="en"><p>The results of study and development of silicon nanowires (SiNWs) formation by metal-assisted chemical etching (MACE) are introduced. Linear dependence of SiNWs length from etching time is established. Total and mirror reflectance spectra, Raman scattering spectra of SiNWs and photoluminescence (PL) spectra are studied. Si band broadening and shifting to short-wave region in Raman spectra with increasing of etching time are revealed.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>кремниевые нанонити</kwd><kwd>металл-стимулированное химическое травление</kwd><kwd>иммерсионное осаждение</kwd><kwd>комбинационное рассеяние</kwd><kwd>фотолюминесценция</kwd></kwd-group><kwd-group xml:lang="en"><kwd>silicon nanowires</kwd><kwd>metal-assisted chemical etching</kwd><kwd>immersion deposition</kwd><kwd>Raman scattering</kwd><kwd>photoluminescence</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Pal A. // Appl. Phys. Lett. 2015. Vol. 107. P. 072104-1-072104-5.</mixed-citation><mixed-citation xml:lang="en">Pal A. // Appl. Phys. Lett. 2015. Vol. 107. P. 072104-1-072104-5.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Gonchar K.A. // J. Nanoelectron. Optoelectron. 2012. Vol. 7. P. 602-606.</mixed-citation><mixed-citation xml:lang="en">Gonchar K.A. // J. Nanoelectron. Optoelectron. 2012. Vol. 7. P. 602-606.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Cheng H. // RSC Adv. 2015. Vol. 5. P. 52217-52225.</mixed-citation><mixed-citation xml:lang="en">Cheng H. // RSC Adv. 2015. Vol. 5. P. 52217-52225.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Hee H. // Nanotoday. 2014. Vol. 9. P. 271-304.</mixed-citation><mixed-citation xml:lang="en">Hee H. // Nanotoday. 2014. Vol. 9. P. 271-304.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Youngseok Y. // Mat. Sci. Semicon. Proc. 2015. Vol. 40. P. 391-396.</mixed-citation><mixed-citation xml:lang="en">Youngseok Y. // Mat. Sci. Semicon. Proc. 2015. Vol. 40. P. 391-396.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">He Y. // Nano Today. 2010. Vol. 5. P. 282-295.</mixed-citation><mixed-citation xml:lang="en">He Y. // Nano Today. 2010. Vol. 5. P. 282-295.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Niauzorau S., Girel K., Bandarenka H. et. al. // E-MRS Fall Meeting. 2015. Abs.12-4.</mixed-citation><mixed-citation xml:lang="en">Niauzorau S., Girel K., Bandarenka H. et. al. // E-MRS Fall Meeting. 2015. Abs.12-4.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">McSweeney W. // Nano. Res. 2014. Vol. 8. P. 1395-1442.</mixed-citation><mixed-citation xml:lang="en">McSweeney W. // Nano. Res. 2014. Vol. 8. P. 1395-1442.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Li. J. // J. Inorg. Mater. 2013. Vol. 28. P. 1207-1212.</mixed-citation><mixed-citation xml:lang="en">Li. J. // J. Inorg. Mater. 2013. Vol. 28. P. 1207-1212.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Peng K. // Adv. Func. Mater. 2006. Vol. 16. P. 387-394.</mixed-citation><mixed-citation xml:lang="en">Peng K. // Adv. Func. Mater. 2006. Vol. 16. P. 387-394.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
