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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-60</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>СТРУКТУРА, МОРФОЛОГИЯ И ЭЛЕКТРОФИЗИЧЕСКИЕ СВОЙСТВА ПРОЗРАЧНЫХ НАНОСЕТЧАТЫХ ПЛЕНОК АЛЮМИНИЯ</article-title><trans-title-group xml:lang="en"><trans-title>STRUCTURE, MORPHOLOGY AND ELECTRICAL PROPERTIES OF TRANSPARENT NANOMESHY ALUMINUM FILMS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Степанов</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Stsiapanau</surname><given-names>A. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Смирнов</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Smirnov</surname><given-names>A. G.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2012</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>5</issue><fpage>21</fpage><lpage>27</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Степанов А.А., Смирнов А.С., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Степанов А.А., Смирнов А.С.</copyright-holder><copyright-holder xml:lang="en">Stsiapanau A.A., Smirnov A.G.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/60">https://doklady.bsuir.by/jour/article/view/60</self-uri><abstract><p>Впервые разработана, теоретически обоснована и экспериментально подтверждена концепция использования наносетчатых пленок алюминия в качестве прозрачных проводящих покрытий. Предлагаемый метод позволяет формировать однородные по площади наносетчатые пленки алюминия с прозрачностью до 85% и эффективным поверхностным сопротивлением менее 50 Ом/ð.</p></abstract><trans-abstract xml:lang="en"><p>Nanomeshy aluminum film is the promising alternative to a tin-doped indium oxide film (ITO) as transparent conductive electrodes. In this paper we describe the fabrication of a nanomeshy aluminum film by electrochemical anodization of aluminum deposited by magnetron sputtering on a glass substrate. The process of anodization is strictly controlled by the characteristic changes of process parameters, followed by selective chemical etching of aluminum oxide. We proposed the model for a nanomeshy Al film and calculated numerically the dependences of their optical transmittance and surface resistance on the characteristic dimensions of the network structure. The proposed method allows fabricating the uniform and stable nanomeshy aluminum film with transparency up to 80% with less than 50 Ohm/ð resistance.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>наносетчатая пленка алюминия</kwd><kwd>электрохимическое анодирование</kwd><kwd>прозрачные покрытия</kwd><kwd>оптоэлектроника</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ginley D.S., Hosono H., Paine D.C. Handbook of Transparent Conductors. NY., 2010.</mixed-citation><mixed-citation xml:lang="en">Ginley D.S., Hosono H., Paine D.C. Handbook of Transparent Conductors. NY., 2010.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Kang M.G., Kim M.S., Kim J.S. et. al. // Adv. Mater. 2008. №20. P. 4408.</mixed-citation><mixed-citation xml:lang="en">Kang M.G., Kim M.S., Kim J.S. et. al. // Adv. 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