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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-541</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ИССЛЕДОВАНИЕ ОПТИЧЕСКИХ ХАРАКТЕРИСТИК СЛОЕВ AlN, ПОЛУЧЕННЫХ МЕТОДАМИ РЕАКТИВНОГО МАГНЕТРОННОГО И ИОННО-ЛУЧЕВОГО РАСПЫЛЕНИЯ</article-title><trans-title-group xml:lang="en"><trans-title>OPTICAL CHARACTERISTICS OF ALN THIN FILMS DEPOSITED BY DC MAGNETRON AND ION-BEAM SPUTTERING STUDY</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ермоленко</surname><given-names>М. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ermolenko</surname><given-names>M. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Достанко</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Dostanko</surname><given-names>A. P.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Голосов</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Golosov</surname><given-names>D. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Завадский</surname><given-names>С. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Zavadskiy</surname><given-names>S. M.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2015</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>5</issue><fpage>119</fpage><lpage>121</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Ермоленко М.В., Достанко А.П., Голосов Д.А., Завадский С.М., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Ермоленко М.В., Достанко А.П., Голосов Д.А., Завадский С.М.</copyright-holder><copyright-holder xml:lang="en">Ermolenko M.V., Dostanko A.P., Golosov D.A., Zavadskiy S.M.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/541">https://doklady.bsuir.by/jour/article/view/541</self-uri><abstract><p>Исследованы оптические характеристики тонких пленок нитрида алюминия, нанесенных методами реактивного магнетронного и реактивного ионно-лучевого распыления. Установлены зависимости показателя преломления и коэффициента поглощения пленок от процентного содержания азота в смеси рабочих газов. Выявлено, что метод реактивного магнетронного распыления позволяет наносить слои нитрида алюминия с более низким коэффициентом поглощения, чем метод реактивного ионно-лучевого распыления и с коэффициентом преломления близким к значению объемного образца.</p></abstract><trans-abstract xml:lang="en"><p>This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive magnetron and ion-beam sputtering. The dependences of the refractive index and absorption coefficient of the films on the percentage of nitrogen in the working gas mixture have been obtained. It was found that reactive magnetron sputtering allows the formation of AlN layers with a lower absorption coefficient than by reactive ion beam sputtering and with a refractive index close to the value appropriate of the bulk material.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>нитрид алюминия</kwd><kwd>ионно-лучевое распыление</kwd><kwd>магнетронное распыление</kwd><kwd>коэффициент поглощения</kwd><kwd>показатель преломления</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Жиляков Л.А., Костановский А.В. // 1992. Т. 30, вып. 2. С. 290-293.</mixed-citation><mixed-citation xml:lang="en">Жиляков Л.А., Костановский А.В. // 1992. Т. 30, вып. 2. С. 290-293.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
