bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2026-24-5-15-23bsuir-4443Research ArticleСтатьиВлияние термообработки на резистивные и структурные свойства пленок оксида ванадияEffect of Heat Treatment on the Resistive and Structural Properties of Vanadium Oxide FilmsЗанькоА. И.ZankaA.

Занько Андрей Иванович, нач. сектора лаборатории Тел.: +375 25 762-16-04

220108, Минск, ул. Корженевского, 16

Zanka Andrei, Head of Laboratory Sector Tel.: +375 25 762-16-04

220108, Minsk, Korzhenevskogo St., 16

AZanko@integral.byКотовД. А.KotovD.

Котов Д. А., канд. техн. наук, доц., доц. каф. микрои наноэлектроники

Минск

Kotov D., Cand. Sci. (Tech.), Associate Professor, Associate Professor at the Department of Microand Nanoelectronics

Minsk

СоловьёвЯ. А.SolovjovJa.

Соловьёв Я. А., д-р. техн. наук, доц., зав. лабораторией

Минск

Solovjov Ja., Dr. Sci. (Tech.), Associate Professor, Head of Laboratory

Minsk

ЛогуновК. Т.LogunovK.

Логунов К. Т., зам. декана факультета радиотехники и электроники

Минск

Logunov K., Deputy Dean of the Faculty of Radio Engineering and Electronics

Minsk

ЧернаусикО. М.CharnavusikO.

Чернаусик О. М., ст. преп.

Минск

Charnavusik O., Senior Lecturer

Minsk

КовальчукН. С.KovalchukN.

Ковальчук Н. С., канд. техн. наук, доц., зам. ген. дир. гл. инж.

Минск

Kovalchuk N. , Cand. Sci (Tech.), Associate Professor, Deputy General Director Chief Engineer

Minsk

ОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ»БеларусьJSC “INTEGRAL” Manager Holding Company “INTEGRAL”BelarusБелорусский государственный университет информатики и радиоэлектроникиБеларусьBelarusian State University of Informatics and RadioelectronicsBelarus2026071120262451523Copyright © Занько А.И., Котов Д.А., Соловьёв Я.А., Логунов К.Т., Чернаусик О.М., Ковальчук Н.С., 20262026Занько А.И., Котов Д.А., Соловьёв Я.А., Логунов К.Т., Чернаусик О.М., Ковальчук Н.С.Zanka A., Kotov D., Solovjov J., Logunov K., Charnavusik O., Kovalchuk N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4443

Исследовано влияние условий термообработки (отжига) в диапазоне 200–400 °С на удельное электрическое сопротивление, температурный коэффициент сопротивления, фазовый состав и структуру пленок оксида ванадия толщиной (100 ± 5) нм, нанесенных на окисленные кремниевые подложки методом импульсного магнетронного распыления. Установлено, что отжиг пленок при 200–275 °С в среде N2 или О2 позволяет формировать пленки с линейной зависимостью удельного сопротивления от температуры в интервале от 0,4 до 1,6 Ом×см с температурным коэффициентом сопротивления от –1,7 до –2,0 %/°С. Такие пленки могут быть использованы в микроболометрах с рабочим диапазоном температур 25–85 °С. Отжиг пленок при 400 °С в среде О2 приводит к гистерезисной зависимости их удельного сопротивления от температуры в интервале от 0,9 до 2,9 Ом×см при абсолютной величине температурного коэффициента сопротивления 3,2–3,4 %/°С. Исследованные резистивные свойства определяются наличием и количественным соотношением кристаллических фаз VO2, V2O5 и VOx, образующихся в процессе отжига.

The effect of heat treatment (annealing) conditions in the range of 200–400 °C on the electrical resistivity, temperature coefficient of resistance, phase composition and structure of vanadium oxide films with a thickness of (100 ± 5) nm deposited on oxidized silicon substrates by pulsed magnetron sputtering has been studied. It has been found that annealing films at 200–275 °C in an environment of N2 or O2 makes it possible to form films with a linear dependence of resistivity on temperature in the range from 0.4 to 1.6 Ohm×cm with a temperature coefficient of resistance from –1.7 to –2.0 %/°C. Such films can be used in microbolometers with an operating temperature range of 25–85 °C. Annealing of films at 400 °C in an O2 medium leads to a hysteresis dependence of their resistivity on temperature in the range from 0.9 to 2.9 Ohm×cm, with an absolute value of the temperature coefficient of resistance of 3.2–3.4 %/°C. The studied resistive properties are determined by the presence and quantitative ratio of the crystalline phases VO2, V2O5, and VOx formed during annealing.

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The authors declare that there are no conflicts of interest present.