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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2026-24-3-36-43</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-4373</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Оптические свойства композитов из полиметилметакрилата и полиэтилена с микронными частицами графитоподобного нитрида углерода</article-title><trans-title-group xml:lang="en"><trans-title>Optical Properties of Composites of Polymethylmethacrylate and Polyethylene with Micron Particles of Graphitic Carbon Nitride</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Максимов</surname><given-names>С. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Maksimov</surname><given-names>S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Максимов Сергей Евгеньевич, инж.-электр. Центра 4.11</p><p>220013, Минск, ул. П. Бровки, 6</p><p>Тел.: +375 29 612-92-19</p></bio><bio xml:lang="en"><p>Maksimov Sergei, Electronics Engineer at the Center 4.11</p><p>220013, Minsk, P. Brovki St., 6</p><p>Тel.: +375 29 612-92-19</p></bio><email xlink:type="simple">maksimov914@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шапошников</surname><given-names>В. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Shaposhnikov</surname><given-names>V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Шапошников В. Л., канд. физ.-мат. наук, вед. науч. сотр. Центра 4.11</p><p>Минск</p></bio><bio xml:lang="en"><p>Shaposhnikov V., Cand. Sci. (Phys. and Math.), Leading Researcher at the Center 4.11</p><p>Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Борисенко</surname><given-names>В. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Borisenko</surname><given-names>V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Борисенко В. Е., д-р физ.-мат. наук, проф., проф. каф. микро- и наноэлектроники</p><p>Минск</p></bio><bio xml:lang="en"><p>Borisenko V., Dr. Sci. (Phys. and Math.), Professor, Professor of the Department of Micro- and Nanoelectronics</p><p>Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>29</day><month>06</month><year>2026</year></pub-date><volume>24</volume><issue>3</issue><fpage>36</fpage><lpage>43</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Максимов С.Е., Шапошников В.Л., Борисенко В.Е., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Максимов С.Е., Шапошников В.Л., Борисенко В.Е.</copyright-holder><copyright-holder xml:lang="en">Maksimov S., Shaposhnikov V., Borisenko V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/4373">https://doklady.bsuir.by/jour/article/view/4373</self-uri><abstract><p>Исследованы пленочные гетероструктуры из полиметилметакрилата и полиэтилена низкой плотности с включенными в их состав микронными частицами полупроводника (графитоподобного нитрида углерода g-C3N4), изготовленные по методике смешивания компонентов и литья. Такие гетероструктуры актуальны для создания экологически дружественных новых оптических элементов обработки информации. Созданы свободные сплошные пленки на основе полиметилметакрилата и полиэтилена низкой плотности толщиной 30–50 мкм и пористые пленки на основе полиметилметакрилата толщиной 50–500 мкм. Содержание добавленного полупроводника составляло 5 мас.%, что обеспечивало их целостность и механическую устойчивость при транспортировке и последующих исследованиях. По оптическим спектрам пропускания этих пленок и их фотолюминесценции установлено, что включенный в исследованные полимерные матрицы g-C3N4 сохраняет свой размер и полупроводниковые свойства. Частицы распределены в синтезированных материалах квазиравномерно. Обнаружено, что спектры пропускания исследованных гетероструктур имеют квазилинейную зависимость интенсивности прошедшего излучения от длины волны падающего излучения, что в фотонике может быть использовано для создания спектрально чувствительных элементов.</p></abstract><trans-abstract xml:lang="en"><p>Film heterostructures made of polymethyl methacrylate and low-density polyethylene with incorporated micron-sized particles of a semiconductor (graphite-like carbon nitride g-C3N4), fabricated using a component mixing and casting technique, were studied. Such heterostructures are relevant for the creation of new environmentally friendly optical elements for information processing. Free-standing continuous films based on polymethyl methacrylate and low-density polyethylene with a thickness of 30–50 μm and porous films based on polymethyl methacrylate with a thickness of 50–500 μm were created. The content of the added semiconductor was 5 wt.%, which ensured their integrity and mechanical stability during transportation and subsequent studies. Based on the optical transmission spectra of these films and their photoluminescence, it was established that g-C3N4 incorporated into the studied polymer matrices retains its size and semiconductor properties. The particles are distributed quasi-uniformly in the synthesized materials. It was found that the transmission spectra of the studied heterostructures have a quasi-linear dependence of the intensity of transmitted radiation on the wavelength of the incident radiation, which can be used in photonics to create spectrally sensitive elements.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>нанокомпозит</kwd><kwd>полиэтилен</kwd><kwd>полиметилметакрилат</kwd><kwd>графитоподобный нитрид углерода</kwd><kwd>оптические свойства</kwd><kwd>морфология</kwd></kwd-group><kwd-group xml:lang="en"><kwd>nanocomposite</kwd><kwd>polyethylene</kwd><kwd>polymethylmethacrylate</kwd><kwd>graphite-like carbon nitride</kwd><kwd>optical properties</kwd><kwd>morphology</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Структурные и фотолюминесцентные свойства графитоподобного нитрида углерода / А. В. Баглов [и др.] // Физика и техника полупроводников. 2020. Т. 54, № 2. 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