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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2025-23-6-24-30</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-4243</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Влияние параметров очистки в высокоплотной плазме аргона на морфологию поверхности стеклянных подложек и характеристики эмиссионного спектра</article-title><trans-title-group xml:lang="en"><trans-title>The Influence of Cleaning Parameters in High-Density Argon Plasma on the Surface Morphology of Glass Substrates and the Characteristics of the Emission Spectrum</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Логунов</surname><given-names>К. Т.</given-names></name><name name-style="western" xml:lang="en"><surname>Logunov</surname><given-names>K. T.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Логунов Константин Тимофеевич, асп. каф. микро- и наноэлектроники</p><p>220013, Минск, ул. П. Бровки, 6</p><p> Тел.: +375 17 293-22-63</p></bio><bio xml:lang="en"><p>Logunov Konstantin Timofeevich, Postgraduate at Micro- and Nanoelectronics Department, Belarusian State University of Informatics and Radioelectronics</p><p>220013, Minsk, P. Brovki St., 6</p><p> Теl.: +375 17 293-22-63</p></bio><email xlink:type="simple">k.logunov@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>25</day><month>12</month><year>2025</year></pub-date><volume>23</volume><issue>6</issue><fpage>24</fpage><lpage>30</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Логунов К.Т., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Логунов К.Т.</copyright-holder><copyright-holder xml:lang="en">Logunov K.T.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/4243">https://doklady.bsuir.by/jour/article/view/4243</self-uri><abstract><p>Исследовано влияние параметров очистки в высокоплотной индуктивно-связанной плазме аргона на морфологию поверхности стеклянных подложек и характеристики ее оптического эмиссионного спектра. Очистка проводилась в диапазоне мощности высокочастотного источника от 100 до 2000 Вт длительностью до 150 с. Морфология поверхности анализировалась методом атомно-силовой микроскопии, а диагностика плазмы обеспечивалась методом оптической эмиссионной спектроскопии. Установлено, что параметры очистки при мощности разряда 300 Вт и длительности 60 с обеспечивают минимальную шероховатость и удаление загрязнений без повреждения поверхности. Спектральный анализ выявил рост интенсивности атомных линий аргона с увеличением мощности и расхода газа, что отражает рост плотности возбужденных частиц и температуры электронов. Полученные зависимости могут быть использованы для автоматизированного контроля и регулировки режимов плазменной очистки в технологических процессах.</p></abstract><trans-abstract xml:lang="en"><p>The influence of cleaning parameters in high-density inductively coupled argon plasma on the surface morphology of glass substrates and the characteristics of their optical emission spectrum was studied. Cleaning was performed with RF source power ranging from 100 to 2000 W and durations of up to 150 s. Surface morphology was analyzed using atomic force microscopy, and plasma diagnostics were provided by optical emission spectroscopy. It was established that cleaning parameters at a discharge power of 300 W and duration of 60 s ensure minimal surface roughness and contaminant removal without surface damage. Spectral analysis revealed an increase in the intensity of argon atomic lines with increasing power and gas flow rate, reflecting an increase in excited particle density and electron temperature. The obtained dependencies can be used for automated monitoring and adjustment of plasma cleaning regimes in technological processes.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>очистка поверхности</kwd><kwd>высокоплотная индуктивно-связанная плазма</kwd><kwd>морфология поверхности</kwd><kwd>атомно-силовая микроскопия</kwd><kwd>оптическая эмиссионная спектроскопия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>surface cleaning</kwd><kwd>high-density inductively coupled plasma</kwd><kwd>surface morphology</kwd><kwd>atomic force microscopy</kwd><kwd>optical emission spectroscopy</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Лучкин, А. Г. 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