bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2025-23-6-5-11bsuir-4241Research ArticleСтатьиВлияние пассивационных слоев на основе нитрида кремния и диоксида кремния на характеристики AlGaN/GaN-ТВПЭ с полевой обкладкой в закрытом состоянииEffect of Silicon Nitride and Silicon Dioxide Passivation Films on the Performance of Off-State Field-Plated AlGaN/GaN HEMTВолчёкВ. С.VolcheckV.

Минск

Volcheck Vladislav, Cand. Sci. (Tech.), Senior Researcher at the R&D Laboratory “Computer-Aided Design of Microand Nanoelectronic Systems” (Lab 4.4)

220013, Minsk, P. Brovki St., 6

Tel.: +375 17 293-84-09

vlad.volchek@bsuir.byЛовшенкоИ. Ю.LovshenkoI.

Минск

Head of the Lab 4.4

220013, Minsk, P. Brovki St., 6

ЮникА. Д.YunikA.

Минск

Leading Engineer at the Branch Laboratory of New Technologies and Materials

Minsk

ГуликоваЕ. А.HulikavaK.

Минск

Engineer at the Branch Laboratory of New Technologies and Materials

Minsk

СоловьёвЯ. А.SolovjovJa.

Минск

Dr. Sci. (Tech.), Associate Professor, Head of the Branch Laboratory of New Technologies and Materials

Minsk

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and RadioelectronicsОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ»JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”202525122025236511Copyright © Волчёк В.С., Ловшенко И.Ю., Юник А.Д., Гуликова Е.А., Соловьёв Я.А., 20252025Волчёк В.С., Ловшенко И.Ю., Юник А.Д., Гуликова Е.А., Соловьёв Я.А.Volcheck V., Lovshenko I., Yunik A., Hulikava K., Solovjov J.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4241

В статье представлены результаты исследования в рамках компьютерного моделирования влияния пассивационных слоев на основе Si3N4 и SiO2 на напряжение пробоя в закрытом состоянии транзистора с высокой подвижностью электронов на основе AlGaN/AlN/GaN с полевыми обкладками, подключенными к истоку или затвору. Выяснено, что напряжение пробоя приборной структуры с полевой обкладкой при использовании пассивационного слоя на основе SiO2 заметно выше, чем при использовании Si3N4, что контрастирует с результатами, обычно получаемыми для транзисторов без полевых обкладок. Также обнаружено, что внутренние механические напряжения в пассивационных слоях на основе Si3N4 определенной толщины (250–300 нм) оказывают существенное влияние на пробивные характеристики, и применение слоев, имеющих механические напряжения на растяжение, может приводить к повышению напряжения пробоя. Проведен анализ характеристик приборной структуры с двойной пассивацией на основе Si3N4/SiO2 и полевой обкладкой, подключенной к затвору.

The effect of Si3N4 and SiO2 passivation films on the off-state breakdown performance of the AlGaN/AlN/GaN high electron mobility transistor with a source- or gate-connected field plate was investigated using TCAD simulations. It was discovered that the breakdown voltage of the field-plated device structure passivated by SiO2 is noticeably higher compared to Si3N4, which contrasts with the results usually observed for transistors without field plates. It was also determined that the intrinsic stress in Si3N4 passivation films of certain thickness (250–300 nm) exerts a significant influence on the breakdown characteristics, with tensile-stressed layers allowing to increase the breakdown voltage. Finally, the device structure with a combined Si3N4/SiO2 passivation stack and a gate field plate was analyzed.

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The authors declare that there are no conflicts of interest present.