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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2025-23-5-27-34</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-4204</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Полупроводниковые твердые растворы Cu2FeSn(Sx,Se1–x)4: синтез, структурные свойства, диаграмма состояния</article-title><trans-title-group xml:lang="en"><trans-title>Semiconductor Solid Solutions Cu2FeSn(Sx,Se1–x)4: Synthesis, Structural Properties, State Diagram</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хорошко</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Khoroshko</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Хорошко Виталий Викторович, канд. техн. наук, доц., зав. каф. проектирования информационно-компьютерных систем,</p><p>220013, Минск, ул. П. Бровки, 6.</p><p>Тел.: +375 44 737-99-99.</p></bio><bio xml:lang="en"><p>Vitaliy V. Khoroshko, Сand. Sci. (Tech.), Associate Professor, Chair of Department of Information and Computer Systems Design, </p><p>6, P. Brovki St., Minsk, 220013.</p><p>Тel.: +375 44 737-99-99.</p></bio><email xlink:type="simple">khoroshko@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Осмоловская</surname><given-names>Т. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Osmolovskaya</surname><given-names>T. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Осмоловская Т. Н., аспирант, </p><p>Минск.</p></bio><bio xml:lang="en"><p>Tatiana N. Osmolovskaya, Postgraduate of the SPC NAS of Belarus,</p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Станчик</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Stanchik</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Станчик А. В., канд. физ.-мат. наук, доц., вед. науч. сотр., </p><p>Минск.</p></bio><bio xml:lang="en"><p>Aliona V. Stanchik, Сand. Sci. (Phys. and Math.), Associate Professor, Leading Researcher, </p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пугач</surname><given-names>Н. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Pugach</surname><given-names>N. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Пугач Н. Г., канд. физ.-мат. наук, проф. департамента электронной инженерии, </p><p>Москва.</p></bio><bio xml:lang="en"><p>Natalia G. Pugach, Сand. Sci. (Phys. and Math.), Professor of the Department of Electronic Engineering, </p><p>Moscow.</p></bio><xref ref-type="aff" rid="aff-4"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дорошкевич</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Doroshkevich</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дорошкевич А. С., канд. физ.-мат. наук, доц., нач. группы сектора исследований, </p><p>Дубна.</p></bio><bio xml:lang="en"><p>Alexandr S. Doroshkevich, Сand. Sci. (Phys. and Math.), Associate Professor, Head of the Research Sector Group, </p><p>Dubna.</p></bio><xref ref-type="aff" rid="aff-5"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Радюш</surname><given-names>Ю. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Radyush</surname><given-names>Yu. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Радюш Ю. В., канд. физ.-мат. наук, доц., вед. науч. сотр.,</p><p>Минск. </p></bio><bio xml:lang="en"><p>Yuri V. Radyush, Сand. Sci. (Phys. and Math.), Associate Professor, Leading Researcher,</p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кузьмар</surname><given-names>И. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Kuzmar</surname><given-names>I. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Кузьмар И. И., канд. техн. наук, доц., зав. лаб. «Импульсный электролиз и многокомпонентные материалы»,</p><p>Минск.</p></bio><bio xml:lang="en"><p>Inna I. Kuzmar, Сand. Sci. (Tech.), Associate Professor, Head of the Laboratory “Pulse Electrolysis and Multicomponent Materials”, </p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лоско</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Loska</surname><given-names>A. U.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Лоско Е. В., инженер; аспирант</p><p>Минск.</p></bio><bio xml:lang="en"><p>Alena U. Loska, Engineer; Postgraduate Student,</p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-6"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники (БГУИР)</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics (BSUIR)</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники (БГУИР); Научно-практический центр Национальной академии наук Беларуси по материаловедению (НПЦ НАН Беларуси)</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics (BSUIR); Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science (SPC NAS of Belarus)</institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Научно-практический центр Национальной академии наук Беларуси по материаловедению (НПЦ НАН Беларуси)</institution></aff><aff xml:lang="en"><institution>Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science (SPC NAS of Belarus)</institution></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Национальный исследовательский университет «Высшая школа экономики»</institution></aff><aff xml:lang="en"><institution>National Research University Higher School of Economics</institution></aff></aff-alternatives><aff-alternatives id="aff-5"><aff xml:lang="ru"><institution>Объединенный институт ядерных исследований</institution></aff><aff xml:lang="en"><institution>Joint Institute for Nuclear Research</institution></aff></aff-alternatives><aff-alternatives id="aff-6"><aff xml:lang="ru"><institution>ОАО «НИИЭВМ»; Белорусский государственный университет информатики и радиоэлектроники (БГУИР)</institution></aff><aff xml:lang="en"><institution>ОJSС “NIIEVM”; Belarusian State University of Informatics and Radioelectronics (BSUIR)</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>29</day><month>10</month><year>2025</year></pub-date><volume>23</volume><issue>5</issue><fpage>27</fpage><lpage>34</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Хорошко В.В., Осмоловская Т.Н., Станчик А.В., Пугач Н.Г., Дорошкевич А.С., Радюш Ю.В., Кузьмар И.И., Лоско Е.В., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Хорошко В.В., Осмоловская Т.Н., Станчик А.В., Пугач Н.Г., Дорошкевич А.С., Радюш Ю.В., Кузьмар И.И., Лоско Е.В.</copyright-holder><copyright-holder xml:lang="en">Khoroshko V.V., Osmolovskaya T.N., Stanchik A.V., Pugach N.G., Doroshkevich A.S., Radyush Y.V., Kuzmar I.I., Loska A.U.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/4204">https://doklady.bsuir.by/jour/article/view/4204</self-uri><abstract><p>В статье представлены результаты получения крупноблочных поликристаллов системы полупроводниковых твердых растворов Cu2FeSn(Sx,Se1–x)4, образующихся во всем диапазоне концентраций. Установлено, что как соединения Cu2FeSnS4, Cu2FeSnSe4, так и твердые растворы имеют тетрагональную структуру станнита I42̅ m с соотношением параметров элементарной ячейки с/а ∼ 2. Параметры элементарной ячейки изменялись линейно в соответствии с законом Вегарда – от a = (5,704 ± 0,005) Å и с = (11,26 ± 0,01) Å для Cu2FeSnSe4 до a = (5,441 ± 0,005) Å и с = (10,72 ± 0,01) Å для Cu2FeSnS4. Установлены зависимости рентгеновской плотности и температуры Дебая. По результатам дифференциального термического анализа определены температуры плавления образцов, построена диаграмма состояния системы.</p></abstract><trans-abstract xml:lang="en"><p>The article presents the results of obtaining large-block polycrystals of the semiconductor solid solution system Cu2FeSn(Sx,Se1–x)4, formed in the entire concentration range. It was found that both the compounds Cu2FeSnS4, Cu2FeSnSe4 and the solid solutions have a tetragonal stannite structure I4̅2m with a ratio of the unit cell parameters с/а ∼ 2. The unit cell parameters varied linearly in accordance with Vegard’s law – from a = (5.704 ± 0.005) Å and c = (11.261 ± 0.01) Å for Cu2FeSnSe4 to a = (5.441 ± 0.005) Å and c = (10.72 ± 0.01) Å for Cu2FeSnS4. The dependences of the X-ray density and the Debye temperature were determined. Based on the results of differential thermal analysis, the melting temperatures of the samples were determined and a system phase diagram was constructed.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>станнит</kwd><kwd>разбавленные магнитные полупроводники</kwd><kwd>кристаллическая структура</kwd><kwd>диаграмма состояния</kwd></kwd-group><kwd-group xml:lang="en"><kwd>stannite</kwd><kwd>dilute magnetic semiconductors</kwd><kwd>crystal structure</kwd><kwd>state diagram</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено в рамках Государственной программы научных исследований «Материаловедение, новые материалы и технологии», подпрограммы «Физика конденсированного состояния и создание новых функциональных материалов и технологий их получения».</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Jing B., Ji J., Hao L., Yang T., Tan E. 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