<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2025-23-4-14-20</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-4177</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Моделирование тепловых полей индукционного нагрева с концентраторами вихревых токов</article-title><trans-title-group xml:lang="en"><trans-title>Modeling of Thermal Fields in Induction Heating with Eddy Current Concentrators</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хацкевич</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Khatskevich</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Хацкевич Александр Дмитриевич, исследователь, магистр техн. наук, ассист. каф. электронной техники и технологии </p><p>220013, Минск, ул. П. Бровки, 6 </p><p>Тел.: +375 29 652-50-30 </p></bio><bio xml:lang="en"><p>Khatskevich Aleksandr Dmitrievich, Researcher, M. of Sci. (Tech.), Assistant at the Department of Electronic Engineering and Technology</p><p>220013, Minsk, P. Brovki St., 6 </p><p>Tel.: +375 29 652-50-30 </p></bio><email xlink:type="simple">dvpodt94@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ланин</surname><given-names>В. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Lanin</surname><given-names>V. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>д-р техн. наук, проф. каф. элект­ронной техники и технологии </p><p>Минск </p></bio><bio xml:lang="en"><p>Dr. Sci. (Tech.), Professor at the Department of Electronic Engineering and Technology </p><p>Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>03</day><month>09</month><year>2025</year></pub-date><volume>23</volume><issue>4</issue><fpage>14</fpage><lpage>20</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Хацкевич А.Д., Ланин В.Л., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Хацкевич А.Д., Ланин В.Л.</copyright-holder><copyright-holder xml:lang="en">Khatskevich A.D., Lanin V.L.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/4177">https://doklady.bsuir.by/jour/article/view/4177</self-uri><abstract><p>Получена трехмерная нелинейная математическая модель индукционного нагрева для формирования шариковых выводов по технологии Flip-Chip. Исследование проведено на частотах 300, 732 и 900 кГц при мощности нагрева 20–100 Вт. Применение ферритового сердечника, фокусирующего магнитное поле, и концентратора вихревых токов позволило установить оптимальные термопрофили формирования шариковых выводов для монтажа интегральных схем со скоростью нагрева от 2,0 до 5,5 °С/c. При анализе полученных результатов по итогам экспериментов оптимальным оказался вариант расположения концентратора снизу платы. В этом случае нагрев шариков припоя на выбранных частотах достиг температуры плавления шариковых выводов 230–250 °С, что достаточно для их оплавления.</p></abstract><trans-abstract xml:lang="en"><p>A three-dimensional nonlinear mathematical model of induction heating for forming ball terminals using the Flip-Chip technology has been developed. The study was conducted at frequencies of 300, 732, and 900 kHz with a heating power of 20–100 W. The use of a ferrite core focusing the magnetic field and an eddy current concentrator allowed us to establish optimal thermal profiles for forming ball terminals for mounting integrated circuits with a heating rate of 2.0 to 5.5 °C/s. When analyzing the results obtained from the experiments, the option of locating the concentrator at the bottom of the board turned out to be optimal. In this case, heating the solder balls at the selected frequencies reached the melting temperature of the ball terminals of 230–250 °C, which is sufficient for their reflow.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>моделирование</kwd><kwd>индукционный нагрев</kwd><kwd>Flip-Chip</kwd></kwd-group><kwd-group xml:lang="en"><kwd>modeling</kwd><kwd>induction heating</kwd><kwd>Flip-Chip</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Baker J., Smith R., Johnson P. 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Soldering and Surface Mount Technology. 25 (4), 45–54.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
