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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2025-23-3-12-18</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-4156</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Электрофизические свойства структур с пленками титаната бария и оксида алюминия, сформированными золь-гель-методом на титане</article-title><trans-title-group xml:lang="en"><trans-title>Electrophysical Properties of Structures with Barium Titanate and Oxide Films Formed by the Sol-Gel Method on Titanium</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Махмутов</surname><given-names>Р. Т.</given-names></name><name name-style="western" xml:lang="en"><surname>Makhmutov</surname><given-names>R. T.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>асп. каф. микро- и наноэлектроники</title></sec></bio><bio xml:lang="en"><sec><title>Postgraduate at the Department of Micro- and Nanoelectronics</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гапоненко</surname><given-names>Н. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Gaponenko</surname><given-names>N. V.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>д-р физ.-мат. наук, проф., зав. науч.-исслед. лаб. «Нанофотоника» (Лаб. 4.5)</title></sec></bio><bio xml:lang="en"><sec><title>Dr. Sci. (Phys. and Math.), Professor, Head of the R&amp;D Laboratory “Nanophotonics” (Lab 4.5)</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лашковская</surname><given-names>Е. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Lashkovskaya</surname><given-names>E. I.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>мл. науч. сотр. Лаб. 4.5</title></sec></bio><bio xml:lang="en"><sec><title>Junior Researcher at the Lab 4.5</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Меледин</surname><given-names>К. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Meledin</surname><given-names>K. I.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>асп. каф. микро- и наноэлектроники</title></sec></bio><bio xml:lang="en"><sec><title>Postgraduate at the Department of Micro- and Nanoelectronics</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кашко</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kashko</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>науч. сотр. науч.-исслед. лаб. «Интегрированные микро- и наносистемы»</title></sec></bio><bio xml:lang="en"><sec><title>Researcher at the R&amp;D Laboratory “Integrated Micro- and Nanosystems”</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Малышев</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Malyshev</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>студ.</title></sec></bio><bio xml:lang="en"><sec><title>Student</title></sec></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Судник</surname><given-names>Л. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Sudnik</surname><given-names>L. V.</given-names></name></name-alternatives><bio xml:lang="ru"><sec><title>д-р техн. наук, зам. дир. по научной работе Научно-исследовательского института импульсных процессов с опытным производством</title></sec></bio><bio xml:lang="en"><sec><title>Dr. Sci. (Tech.), Deputy Director for Research at the Research Institute of Pulse Processes with Pilot Production</title><p> </p></sec></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт порошковой металлургии имени академика О. В. Романа</institution></aff><aff xml:lang="en"><institution>Powder Metallurgy Institute</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>15</day><month>07</month><year>2025</year></pub-date><volume>23</volume><issue>3</issue><fpage>12</fpage><lpage>18</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Махмутов Р.Т., Гапоненко Н.В., Лашковская Е.И., Меледин К.И., Кашко И.А., Малышев А.Д., Судник Л.В., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Махмутов Р.Т., Гапоненко Н.В., Лашковская Е.И., Меледин К.И., Кашко И.А., Малышев А.Д., Судник Л.В.</copyright-holder><copyright-holder xml:lang="en">Makhmutov R.T., Gaponenko N.V., Lashkovskaya E.I., Meledin K.I., Kashko I.A., Malyshev A.D., Sudnik L.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/4156">https://doklady.bsuir.by/jour/article/view/4156</self-uri><abstract><p>Золь-гель-методом сформированы пленки оксида алюминия и титаната бария на подложках из титана и окисленного монокристаллического кремния. Исследована зависимость емкости и тангенса угла диэлектрических потерь от частоты конденсаторной структуры Al2O3/BaTiO3/Ni в диапазоне 200 Гц–200 кГц на подложке из титана с использованием подложки в качестве нижнего электрода. В области высоких частот (20–200 кГц) среднеквадратичное отклонение емкости составило 95–97 пФ, низких частот (0,2–10,0 кГц) – 80–94 пФ. Значения емкости и тангенса угла диэлектрических потерь сохранялись в пределах установленных значений среднеквадратичного отклонения в течение года. Приведены примеры изображений микродисков и волноводов, полученных методами фотолитографии и химического травления структур c пленками Al2O3, SiO2 и BaTiO3 для последующих разработок планарных волноводов и электрооптических модуляторов.</p></abstract><trans-abstract xml:lang="en"><p>Aluminum oxide and barium titanate films were formed on titanium and oxidized single-crystal silicon substrates using the sol-gel method. The dependence of the capacitance and the dielectric loss tangent on the frequency of the Al2O3/BaTiO3/Ni capacitor structure was studied in the range of 200 Hz–200 kHz on a titanium substrate using the substrate as the lower electrode. In the high-frequency region (20–200 kHz), the standard deviation of the capacitance was 95–97 pF, and in the low-frequency region (0.2–10.0 kHz), it was 80–94 pF. The capacitance and dielectric loss tangent values remained within the established standard deviation values for a year. Examples of images of microdisks and waveguides obtained by photolithography and chemical etching of structures with Al2O3, SiO2 and BaTiO3 films are given for subsequent development of planar waveguides and electrooptical modulators.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>золь-гель-метод</kwd><kwd>конденсатор</kwd><kwd>титанат бария</kwd><kwd>титан</kwd><kwd>микродиски</kwd><kwd>волноводы</kwd><kwd>фотолитография</kwd></kwd-group><kwd-group xml:lang="en"><kwd>sol-gel method</kwd><kwd>capacitor</kwd><kwd>barium titanate</kwd><kwd>titanium</kwd><kwd>microdisks</kwd><kwd>waveguides</kwd><kwd>photolithography.</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке задания 2.02 ГПНИ «Материаловедение, новые материалы и технологии», задания 1.4 ГПНИ «Химические процессы, реагенты и технологии, биорегуляторы и биооргхимия» и проекта Белорусского республиканского фонда фундаментальных исследований № Т23РНФ-147.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Hironori, Hatono. 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