bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2025-23-2-28-34bsuir-4108Research ArticleСтатьиМоделирование из первых принципов интенсивностей электронно-фононного рассеивания в гидрированном графенеFirst-Principles Modeling of Electron-Phonon Scattering Rates in Hydrogenated GrapheneМищенкоВ. Н.MishchankaV. N.

Минск

Valery  V. Mishchanka, Cand. Sci. (Tech.), Associate Professor

220013, Minsk, P. Brovki St., 6 

mishchenko@bsuir.byБелорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics2025290420252322834Copyright © Мищенко В.Н., 20252025Мищенко В.Н.Mishchanka V.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4108

Графен, представитель нового поколения 2D-материалов, остается в центре внимания научных исследований как отражение его уникальных электрических и механических характеристик. В статье излагаются результаты исследования процедур электронного рассеяния оптических и акустических фононов в графене, модифицированном атомами водорода, – структуре C2H2, известной как графан. В полученных зависимостях скоростей рассеяния учтены совместные процессы испускания и поглощения фононов электронами, а взаимодействие фононов с материалом подложки не рассматривалось. Интенсивности рассеяния играют важную роль для детального изучения динамики транспорта носителей заряда в полупроводниковых структурах, содержащих гетерогенные слои. Их использование позволяет реализовать известный многочастичный метод Монте-Карло, широко применяемый при моделировании сложных полупроводниковых приборов. Полученные результаты позволят исследовать новые гетероструктурные приборы на основе графена и его модификаций с улучшенными выходными характеристиками в высокочастотных диапазонах работы.

Graphene, a representative of a new generation of 2D materials, remains in the center of scientific research as a reflection of its unique electrical and mechanical properties. The article presents the results of a study of electron scattering procedures of optical and acoustic phonons in graphene modified with hydrogen atoms, a C2H2 structure known as graphane. The obtained dependences of the scattering rates take into account the combined processes of phonon emission and absorption by electrons, but the interaction of phonons with the substrate material is not considered. The scattering rates play an important role in a detailed study of the dynamics of charge carrier transport in semiconductor structures containing heterogeneous layers. Their use makes it possible to implement the well-known many-particle Monte Carlo method, widely used in modeling complex semiconductor devices. The obtained results will allow us to study new heterostructured devices based on graphene and its modifications with improved output characteristics in high-frequency operating ranges.

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The authors declare that there are no conflicts of interest present.