bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2025-23-2-12-19bsuir-4106Research ArticleСтатьиВлияние легирования цирконием на диэлектрические свойства пленок оксида гафнияInfluence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide FilmsГолосовД. А.GolosovD. A.

Минск

Dmitriy A. Golosov, Сand. Sci. (Tech.), Associate Professor, Leading Researcher at the Center “Ion Plasma Systems and Technologies” (Center 2.1

220013, Minsk, P. Brovki St., 6 

golosov@bsuir.byДжангДж.ZhangJ.

Сиань

Jin Zhang, Сand. Sci. (Tech.), Researcher at the Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test

Xi’an

ЗавадскийС. М.ZavadskiS. M.

Минск

Sergey M. Zavadski, Сand. Sci. (Tech.), Associate Professor, Head of the Center 2.1

Minsk

МельниковС. Н.MelnikovS. N.

Минск

Sergey N. Melnikov, Сand. Sci. (Tech.), Leading Researcher at the Center 2.1

Minsk

ДоанХ. Т.DoanH. T.

Нячанг

Hoang T. Doan, Сand. Sci. (Tech.), Head of the Department of Information Technology

Nha Trang

АлександровичП. А.AlexandrovitchP. A.

Минск

Pavel A. Alexandrovitch, Student

Minsk

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and RadioelectronicsСианьский политехнический университетXi’an Technologiсal UniversityВьетнамская народная военно-морская академияVietnam People’s Naval Academy2025290420252321219Copyright © Голосов Д.А., Джанг Д., Завадский С.М., Мельников С.Н., Доан Х.Т., Александрович П.А., 20252025Голосов Д.А., Джанг Д., Завадский С.М., Мельников С.Н., Доан Х.Т., Александрович П.А.Golosov D.A., Zhang J., Zavadski S.M., Melnikov S.N., Doan H.T., Alexandrovitch P.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4106

Проведено сравнение диэлектрических характеристик (относительной диэлектрической проницаемости, тангенса угла диэлектрических потерь, ширины запрещенной зоны, тока утечки и пробивного напряжения) пленок оксидов гафния и гафния-циркония. Показано, что импульсным реактивным магнетронным распылением Hf-мишени в среде рабочих газов Ar/O2 могут быть получены пленки HfOx с относительной диэлектрической проницаемостью ε = 12,5–16,0 и ε = 12,0–14,0 на частотах F = 1 кГц и F = 1 МГц соответственно, с тангенсом угла диэлектрических потерь tgφ = 0,012–0,022 (F = 1 кГц) и tgφ = 0,053–0,062 (F = 1 МГц), плотностью тока утечки JL = (1,0–3,0) × 10–3 A/м2 при напряженности электрического поля E = 5 × 107 В/м, с шириной запрещенной зоны Eg = 5,85–5,87 эВ и напряженностью поля пробоя Eпр = (2,1–2,4) × 108 В/м. Легирование оксида гафния цирконием (40 ат.%) позволило уменьшить тангенс угла диэлектрических потерь до 0,008–0,012 (F = 1 кГц) и до 0,04–0,05 (F = 1 МГц), плотность тока утечки – до (3–5) × 10–5 А/м2, увеличить пробивное напряжение до (2,5–3,0) × 108 В/м. При этом наблюдалось незначительное повышение относительной диэлектрической проницаемости пленок до 14–16 на частотах 1 кГц и 1 МГц за счет уменьшения частотной дисперсии от 1,15 до значений менее 1,10 и увеличения Eg до 5,86–5,89 эВ.

A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas environment can be used to obtain HfOx films with a relative permittivity of ε = 12.5–16.0 and ε = 12.0–14.0 at frequencies of F = 1 kHz and F = 1 MHz, respectively, with a dielectric loss tangent of tgα = 0.012–0.022 (F = 1 kHz) and tgα = 0.053–0.062 (F = 1 MHz), a leakage current density of JL = (1.0–3.0) × 10–3 A/m2 at an electric field strength of E = 5 × 107 V/m, with a band gap of Eg = 5.85–5.87 eV and a breakdown field strength of Ebr = (2.1–2.4) × 108 V/m. Doping of hafnium oxide with zirconium (40 at.%) made it possible to reduce the dielectric loss tangent to 0.008–0.012 (F = 1 kHz) and to 0.04–0.05 (F = 1 MHz), the leakage current density to (3–5) × 10–5 A/m2, and increase the breakdown voltage to (2.5–3.0) × 108 V/m. At the same time, a slight increase in the relative permittivity of the films to 14–16 was observed at frequencies of 1 kHz and 1 MHz due to a decrease in frequency dispersion from 1.15 to values less than 1.10 and an increase in Eg to 5.86–5.89 eV.

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The authors declare that there are no conflicts of interest present.