bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2025-23-2-5-11bsuir-4105Research ArticleСтатьиЛавинные светодиоды на основе наноструктурированного кремния для СВЧ-диапазона частотAvalanche LEDs Based on Nanostructured Silicon for Microwave Frequency RangeЛазарукС. К.LazaroukS. K.

Лазарук Сергей Константинович, д-р физ.-мат. наук, проф., проф. каф. микрои наноэлектроники, зав. науч.-исслед. лаб. «Интегрированные микрои наносистемы» (НИЛ 4.6)

220013, Минск, ул. П. Бровки, 6

Serguei  К. Lazarouk, Dr. Sci. (Phys. and Math.), Professor, Professor at the Department of Micro- and Nanoelectronics, Head of the R&D Laboratory “Integrated Micro- and Nanosystems” (Lab 4.6)

220013, Minsk, P. Brovki St., 6 

serg@nano.bsuir.edu.byЛешокА. А.LeshokA. A.

Канд. физ.-мат. наук, доц., нач. науч.-исслед. Центра наноэлектроники и новых материалов

Минск

Andrei A. Leshok, Cand. Sci. (Phys. and Math.), Associate Professor, Head of the Scientific Research Center of Nanoelectronics and Novel Materials

Minsk

ДолбикА. В.DolbikA. V.

Науч. сотр. НИЛ 4.6

Минск

Alexander V. Dolbik, Researcher at the Lab 4.6

Minsk

ТомашевичЛ. П.TamashevichL. P.

Инж.-электрон. НИЛ 4.6

Минск

Leanid P. Tamashevich, Electronics Engineer at the Lab. 4.6

Minsk

КлюцкийА. Ю.KlutskyA. Y.

Ст. преп. каф. электроники

Минск

Aleksey Y. Klutsky, Senior Lecturer at the Electronics Department

Minsk

ДудичВ. В.DudichV. V.

Науч. cотр. НИЛ 4.6

Минск

Vladislav V. Dudich, Researcher at the Lab 4.6

Minsk

ЛабуновВ. А.LabunovV. A.

Акад. НАН Беларуси, д-р техн. наук, проф., науч. рук. НИЛ 4.6

Минск

Vladimir A. Labunov, Academician at the National Academy of Sciences of Belarus, Dr. Sci. (Tech.), Professor, Scientific Director of the Lab 4.6

Minsk

ЕфименкоС. А.EfimenkoS. A.

Канд. техн. наук, гл. констр., зав. лаб.

Минск

Sergey A. Efimenko, Cand. Sci. (Tech.), Chief Designer, Head of the Laboratory

Minsk

КовальчукН. С.KovalchukN. S.

Канд. техн. наук, доц., зам. ген. дир. – гл. инж.

Минск

Natallia S. Kovalchuk, Cand. Sci. (Tech.), Assosiate Professor, Deputy General Director – Chief Engineer

Minsk

КицюкЕ. П.KitsyukE. P.

Канд. техн. наук, нач. науч.-исслед. лаб. перспективных процессов

Москва

Evgeny P. Kitsyuk, Cand. Sci. (Tech.), Head of the R&D Laboratory of Advanced Processes

Moscow

РязановР. М.RyazanovR. M.

Инж.

Москва

Roman M. Ryazanov, Engineer

Moscow

БасаевА. С.BasaevA. S.

Зам. дир.

Москва

Alexander S. Basaev, Deputy Director

Moscow

СветухинВ. В.SvetukhinV. V.

Д-р физ.-мат. наук, проф., дир.

Москва

Vyacheslav V. Svetukhin, Dr. Sci. (Phys. and Math.), Professor, Director

Moscow

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and RadioelectronicsОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ»JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”Научно-производственный комплекс «Технологический центр»Scientific-Manufacturing Complex “Technological Center”202529042025232511Copyright © Лазарук С.К., Лешок А.А., Долбик А.В., Томашевич Л.П., Клюцкий А.Ю., Дудич В.В., Лабунов В.А., Ефименко С.А., Ковальчук Н.С., Кицюк Е.П., Рязанов Р.М., Басаев А.С., Светухин В.В., 20252025Лазарук С.К., Лешок А.А., Долбик А.В., Томашевич Л.П., Клюцкий А.Ю., Дудич В.В., Лабунов В.А., Ефименко С.А., Ковальчук Н.С., Кицюк Е.П., Рязанов Р.М., Басаев А.С., Светухин В.В.Lazarouk S.K., Leshok A.A., Dolbik A.V., Tamashevich L.P., Klutsky A.Y., Dudich V.V., Labunov V.A., Efimenko S.A., Kovalchuk N.S., Kitsyuk E.P., Ryazanov R.M., Basaev A.S., Svetukhin V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4105

Для развития кремниевой фотоники необходима разработка эффективного источника светового сигнала. В качестве такого источника могут использоваться лавинные кремниевые светодиоды. В статье рассмотрены лавинные светодиоды на основе наноструктурированного кремния. Измерение емкости светодиодных структур показало, что при уменьшении площади светодиодов до 100 мкм2 суммарная емкость светодиода и металлической разводки уменьшается до сотен фемтофарад, что обеспечивает лавинным светодиодам функционирование в СВЧ-диапазоне. Показано, что увеличение быстродействия лавинных светодиодов ограничено резистивно-емкостными задержками, зависящими от барьерной емкости диодных структур. Рассмотрены способы увеличения быстродействия лавинных светодиодов как в сверхвысоком частотном диапазоне, так и в гипервысоком диапазоне частот. В частности, при уменьшении рабочей площади светодиодов до 1 мкм2 прогнозируется их функционирование во всем гигагерцовом диапазоне частот.

Development of an efficient light signal source is a basic necessity for the development of silicon photonics. Avalanche silicon light emitting diodes (LEDs) can serve as such a source. The article discusses avalanche LEDs based on nanostructured silicon. Measurement of the capacitance of LED structures has shown that when the LED area is reduced to 100 μm2, the total capacitance of the LED and metal wiring is reduced to hundreds of femtofarads, which ensures the functioning of avalanche LEDs in the microwave range. It is shown that the increase in the speed of avalanche LEDs is limited by resistive-capacitive delays, depending on the barrier capacitance of the diode structures. Methods for increasing the speed of avalanche LEDs in both the ultra-high frequency range and the hyper-high frequency range are considered. In particular, by reducing the working area of LEDs to 1 µm2, they are predicted to function over the entire gigahertz frequency range.

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The authors declare that there are no conflicts of interest present.