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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2024-22-4-14-21</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-3951</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Фотоприемники ультрафиолетового диапазона на основе легированных алюминием и никелем пленок оксида цинка</article-title><trans-title-group xml:lang="en"><trans-title>UV-Photodetectors Based on Zinc Oxide Films Doped with Aluminum and Nickel</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Греков</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Grekov</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Греков Игорь Александрович, асп. каф. микро- и наноэлектроники, мл. науч. сотр. науч.-исслед. лаб. «Материалы и структуры наноэлектроники» (НИЛ 4.3),</p><p>220013, г. Минск, ул. П. Бровки, 6.</p><p>Тел.: +375 33 667-93-28.</p></bio><bio xml:lang="en"><p>Grekov Igor Alexandrovich, Postgraduate at the Department of Micro and Nanoelectronics, Junior Researcher at the Scientific Research Laboratory “Materials and Structures of Nanoelectronics” (Lab. 4.3),</p><p>6, P. Brovki St., Minsk, 220013.</p><p>Phone: +375 33 667-93-28</p></bio><email xlink:type="simple">igrekovscience@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Янушкевич</surname><given-names>К. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Yanushkevich</surname><given-names>K. O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Янушкевич К. О., асп. каф. микро- и наноэлектроники, мл. науч. сотр. НИЛ 4.3,</p><p>Минск.</p></bio><bio xml:lang="en"><p>Yanushkevich K. O., Postgraduate at the Department of Micro- and Nanoelectronics, Junior Researcher at the Lab. 4.3, </p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Чубенко</surname><given-names>Е. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Chubenko</surname><given-names>E. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Чубенко Е. Б., канд. техн. наук, доц., доц. каф. микро- и наноэлектроники, вед. науч. сотр. НИЛ 4.3, </p><p>Минск.</p></bio><bio xml:lang="en"><p>Chubenko E. B., Cand. of Sci., Associate Professor, Associate Professor at the Department of Micro- and Nanoelectronics, Senior Researcher at the Lab. 4.3, </p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бондаренко</surname><given-names>В. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Bondarenko</surname><given-names>V. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Бондаренко В. П., канд. техн. наук, доц., зав. НИЛ 4.3,</p><p>Минск.</p></bio><bio xml:lang="en"><p>Bondarenko V. P., Cand. of Sci., Associate Professor, Head of the Lab. 4.3, </p><p>Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники (БГУИР)</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics (BSUIR)</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>01</day><month>09</month><year>2024</year></pub-date><volume>22</volume><issue>4</issue><fpage>14</fpage><lpage>21</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Греков И.А., Янушкевич К.О., Чубенко Е.Б., Бондаренко В.П., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Греков И.А., Янушкевич К.О., Чубенко Е.Б., Бондаренко В.П.</copyright-holder><copyright-holder xml:lang="en">Grekov I.A., Yanushkevich K.O., Chubenko E.B., Bondarenko V.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/3951">https://doklady.bsuir.by/jour/article/view/3951</self-uri><abstract><p>Комбинированием методов золь-гель и гидротермального осаждения на стеклянных подложках получены тонкопленочные покрытия из оксида цинка с примесью никеля и алюминия. Исследования структуры и состава пленок методами сканирующей электронной микроскопии, энергодисперсионной рентгеновской и рамановской спектроскопии показали, что они состоят из плотноупакованных кристаллитов оксида цинка, легированных примесными атомами никеля и алюминия. На основе полученных пленок изготовлены фотоприемники резистивного типа. Показано, что при облучении светом ультрафиолетового диапазона с длиной волны менее 400 нм удельное сопротивление структуры уменьшается с 190–210 до 7,5–8,0 Ом⋅см. Достигнутое время отклика при нарастании светового импульса – 48 с, тогда как время спада составляет ≈700 с. </p></abstract><trans-abstract xml:lang="en"><p>By combining sol-gel and hydrothermal deposition methods on glass substrates, thin-film coatings of zinc oxide doped with nickel and aluminum were obtained. Studies of the structure and composition of the films using scanning electron microscopy, energy-dispersive X-ray and Raman spectroscopy have shown that they consist of close-packed zinc oxide crystallites doped with impurity atoms of nickel and aluminum. Resistive type photodetectors were manufactured based on the films obtained. It has been shown that when irradiated with ultraviolet light with a wavelength less than 400 nm, the resistivity of the structure decreases from 190–210 to 7.5–8.0 Ohm⋅cm. The achieved response time for the rise of the light pulse is 48 s, while the decay time is ≈700 s.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>оксид цинка</kwd><kwd>золь-гель</kwd><kwd>гидротермальное осаждение</kwd><kwd>фотодетектор</kwd><kwd>ультрафиолетовое излучение</kwd></kwd-group><kwd-group xml:lang="en"><kwd>zinc-oxide</kwd><kwd>sol-gel</kwd><kwd>hydrothermal deposition</kwd><kwd>photodetector</kwd><kwd>ultraviolet radiation</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Chen K. J., Hung F. Y., Chang S. J., Young S. J. (2009) Optoelectronic Characteristics of UV Photodetect or Based on ZnO Nanowire Thin Films. J. of Alloys and Compounds. 479 (1–2), 74–677. DOI: 10.1016/j.jallcom.2009.01.026.</mixed-citation><mixed-citation xml:lang="en">Chen K. J., Hung F. Y., Chang S. J., Young S. J. 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