bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2024-22-4-5-13bsuir-3950Research ArticleСтатьиОсобенности структурно-фазовых превращений в слоях сплава Ni–Pt–V на кремнии при быстрой термической обработкеFeatures of Structural and Phase Transformations in Layers of Ni–Pt–V Alloy on Silicon During Rapid Heat TreatmentСоловьёвЯ. А.SolovjovJa. А.

Соловьёв Ярослав Александрович, канд. техн. наук, доц., зав. отрасл. лаб. новых технологий и материалов,

220108, г. Минск, ул. Корженевского, 16 ОАО «ИНТЕГРАЛ»

Тел.: +375 17 398-14-03

Solovjov Jaroslav Aleksandrovich, Cand. of Sci., Аssociate Professor, Head of the Branch Laboratory of New Technologies and Materials,

220108, Minsk, Korzhenevskogo St., 16

JSC “INTEGRAL”.

Phone: +375 17 398-14-03

jsolovjov@integral.byГайдукП. И.GaidukP. I.

Гайдук П. И., д-р физ.-мат. наук, проф., проф. каф. физической электроники и нанотехнологий,

Минск.

Gaiduk P. I., Dr. of Sci. (Phys. and Math.), Professor, Professor at the Physical Electronics and Nanotechnologies Department,

Minsk.

ОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ»JSC “INTEGRAL” – “INTEGRAL” Holding Managing CompanyБелорусский государственный университетBelarusian State University202431082024224513Copyright © Соловьёв Я.А., Гайдук П.И., 20242024Соловьёв Я.А., Гайдук П.И.Solovjov J.А., Gaiduk P.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/3950

Методами резерфордовского обратного рассеяния, рентгенофазового анализа, просвечивающей электронной микроскопии и дифракции установлены особенности структурно-фазовых превращений в слоях сплава Ni–Pt–V толщиной 30 нм на поверхности монокристаллического n-Si(111) при быстрой термической обработке некогерентным световым потоком постоянной мощности от кварцевых галогенных ламп, направленным на обратную сторону подложки, длительностью 7 с до достижения температуры от 350 до 500 °С. Показано, что в данных условиях термообработки происходит формирование слоев NiхSiy, характеризующихся различной степенью упорядоченности (эпитаксиальности). Установлено, что быстрая термообработка при температуре 350 °С сопровождается перераспределением атомов никеля и кремния до состава ∼Ni3Si на границе раздела пленка-подложка с уменьшением доли Si к поверхности с формированием доменов гексагональной (P321) фазы силицида β-Ni31Si12 эпитаксиальных подложек. Быстрая термообработка при температуре от 400 до 500 °С приводит к дальнейшему диффузионному перераспределению реагирующих компонентов до композиционного состава ∼Ni50Si50 и формированию орторомбической (Pnma) фазы силицида NiSi, имеющего трансротационную степень эпитаксиальности. При этом упорядоченный рост силицида NiSi происходит на эпитаксиальных доменах β-Ni31Si12, сохраняющихся на границе раздела силицид-подложка вплоть до температуры 500 °С.

Using the methods of Rutherford backscattering, X-ray phase analysis, transmission electron microscopy and diffraction, the features of structural and phase transformations in layers of Ni–Pt–V alloy with a thickness of 30 nm on the surface of monocrystalline n-Si(111) under rapid heat treatment with incoherent constant-power light flux from quartz halogen lamps directed to the reverse side of the substrate for a duration of 7 s until a temperature of 350 to 500 °С is reached have been established. It is shown that under these conditions of heat treatment, the formation of NixSiy layers occurs, characterized by varying degrees of ordering (epitaxy). It was found that rapid heat treatment at a temperature of 350 °С is accompanied by a redistribution of nickel and silicon atoms to the composition ∼Ni3Si at the film-substrate interface with a decrease in the proportion of Si towards the surface with the formation of domains of the hexagonal (P321) phase of the β-Ni31Si12 silicide epitaxial to the substrate. Rapid heat treatment at temperature from 400 to 500 °С leads to a further diffusion redistribution of the reacting components to a composite composition of ∼Ni50Si50 and the formation of an orthorhombic (Pnma) phase of NiSi silicide having a transrotational degree of epitaxy. In this case, the ordered growth of NiSi silicide occurs on the epitaxial domains of β-Ni31Si12, which persist at the interface between the silicide and the substrate up to a temperature of 500 °С.

силицидысплав никель-платина-ванадийбыстрая термическая обработкаструктурно-фазовое превращениеsilicidesnickel-platinum-vanadium alloyrapid heat treatmentstructural and phase transformationИсследования проводились в рамках проектов Государственных программ научных исследований (№ ГР 20212702, 20191100). Авторы признательны О. В. Мильчанину и С. В. Злоцкому за помощь при проведении эксперимента.The research was carried out within the framework of projects of the State Scientific Research Programs (SR No 20212702, 20191100). The authors are grateful to O. V. Milchanin and S. V. Zlotsky for their help in performing the experiment.ReferencesBorisenko V. E., Heskesth P. J. (1997) Rapid Thermal Processing of Semiconductors. Berlin, Springer.Borisenko V. E., Heskesth P. J. (1997) Rapid Thermal Processing of Semiconductors. Berlin, Springer.Chen L. J. (2004) Silicide Technology for Integrated Circuits. London, Institution of Engineering and Technology.Chen L. J. (2004) Silicide Technology for Integrated Circuits. London, Institution of Engineering and Technology.Wolansky D., Blaschke J. P., Drews J., Grabolla T., Heinemann B., Lenke T., et al. (2020) Nickel and Nickel-Platinum Silicide for BCDMOS Devices. ECS Trans. 98 (5), 351–361. http:/doi.org/10.1149/09805.0351ecst.Wolansky D., Blaschke J. P., Drews J., Grabolla T., Heinemann B., Lenke T., et al. (2020) Nickel and NickelPlatinum Silicide for BCDMOS Devices. ECS Trans. 98 (5), 351–361. http:/doi.org/10.1149/09805.0351ecst.Wang R. N., Feng J. Y., Huang Y. (2003) Mechanism About Improvement of NiSi Thermal Stability for Ni/Pt/Si (111) Bi-Layered System. Applied Surface Science. 207 (1–4), 139–143. http://doi.org/10.1016/S0169-4332(02)01327-2.Wang R. N., Feng J. Y., Huang Y. (2003) Mechanism About Improvement of NiSi Thermal Stability for Ni/Pt/Si (111) Bi-Layered System. Applied Surface Science. 207 (1–4), 139–143. http://doi.org/10.1016/S0169-4332(02)01327-2.Adusumilli P., Seidman D., Murray C. (2012) Silicide-Phase Evolution and Platinum Redistribution During Silicidation of Ni0.95Pt0.05/Si(100) Specimens. Applied Physics Letters. 112 (6). http://doi.org/10.1063/1.4751023.Adusumilli P., Seidman D., Murray C. (2012) Silicide-Phase Evolution and Platinum Redistribution During Silicidation of Ni0.95Pt0.05/Si(100) Specimens. Applied Physics Letters. 112 (6). http://doi.org/10.1063/1.4751023.Li M. Y., Chen J. M., Liu C. C., Lin J. F. (2011) CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer. IEEE Electron Device Letters. 32 (12), 1725–1727. http://doi.org/10.1109/LED.2011.2166991.Li M. Y., Chen J. M., Liu C. C., Lin J. F. (2011) CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer. IEEE Electron Device Letters. 32 (12), 1725–1727. http://doi.org/10.1109/LED.2011.2166991.Mangelinck D., Dai J. Y., Pan J. S., Lahiri S. K. (1999) Enhancement of Thermal Stability of NiSi Films on (100)Si and (111)Si by Pt Addition. Applied Physics Letters. 75 (12), 1736–1738. http://doi.org/10.1063/1.124803.Mangelinck D., Dai J. Y., Pan J. S., Lahiri S. K. (1999) Enhancement of Thermal Stability of NiSi Films on (100)Si and (111)Si by Pt Addition. Applied Physics Letters. 75 (12), 1736–1738. http://doi.org/10.1063/1.124803.Cioldin F. H., Diniz J. A., Vaz A. R., Calligaris G. A., Cardoso L. P. et al. (2017) Study of the Phase Transitions of Nickel Platinum Silicide Obtained by Sputtering and Rapid Thermal Processing. 32nd Symposium on Microelectronics Technology and Devices (SBMicro). http://doi.org/10.1109/SBMicro.2017.8113007.Cioldin F. H., Diniz J. A., Vaz A. R., Calligaris G. A., Cardoso L. P. et al. (2017) Study of the Phase Transitions of Nickel Platinum Silicide Obtained by Sputtering and Rapid Thermal Processing. 32nd Symposium on Microelectronics Technology and Devices (SBMicro). http://doi.org/10.1109/SBMicro.2017.8113007.Ahmet P., Shiozawa T., Nagahiro K., Nagata T., Kakushima K., Tsutsu K., et al. (2008) Thermal Stability of Ni Silicide Films on Heavily Doped n+ and p+ Si Substrates. Microelectronic Engineering. 85 (7), 1642–1646. http://doi.org/10.1016/j.mee.2008.04.001.Ahmet P., Shiozawa T., Nagahiro K., Nagata T., Kakushima K., Tsutsu K., et al. (2008) Thermal Stability of Ni Silicide Films on Heavily Doped n+ and p+ Si Substrates. Microelectronic Engineering. 85 (7), 1642–1646. http://doi.org/10.1016/j.mee.2008.04.001.Lee P. S., Pey K. L., Mangelinck D., Ding J., Chi D. Z., Chan L. (2001) New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters. 22 (12), 568–570. http://doi.org/10.1109/55.974579.Lee P. S., Pey K. L., Mangelinck D., Ding J., Chi D. Z., Chan L. (2001) New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters. 22 (12), 568–570. http://doi.org/10.1109/55.974579.Detavernier C., Özcan A. S., Jordan-Sweet J., Stach E. A., Tersoff J., Ross F. M., et al. (2003) An Off-Normal Fibre-Like Texture in Thin Films on Single-Crystal Substrates. Nature. 426, 641–645. http://doi.org/10.1038/nature02198.Detavernier C., Özcan A. S., Jordan-Sweet J., Stach E. A., Tersoff J., Ross F. M., et al. (2003) An Off-Normal Fibre-Like Texture in Thin Films on Single-Crystal Substrates. Nature. 426, 641–645. http://doi.org/10.1038/nature02198.Murarka S. P. (1986) Silicides for VLSI Applications. Moscow, Mir Publ. 176 (in Russian).Murarka S. P. (1986) Silicides for VLSI Applications. Moscow, Mir Publ. 176 (in Russian).Tu K. N., Chu W. K., Mayer J. W. (1975) Structure and Growth Kinetics of Ni2Si on Silicon. Thin Solid Films. 25 (2), 403–413. http://doi.org/10.1016/0040-6090(75)90058-9.Tu K. N., Chu W. K., Mayer J. W. (1975) Structure and Growth Kinetics of Ni2Si on Silicon. Thin Solid Films. 25 (2), 403–413. http://doi.org/10.1016/0040-6090(75)90058-9.Frank K., Schubert K. (1971) Kristallstruktur von Ni31Si12. Acta Crystallographica Section B. 27 (5), 916–920. https://doi.org/10.1107/S0567740871003261.Frank K., Schubert K. (1971) Kristallstruktur von Ni31Si12. Acta Crystallographica Section B. 27 (5), 916–920. https://doi.org/10.1107/S0567740871003261.Hirsch P. B., Howie A., Nicholson R. B., Pashley D. W., Whelan M. J. (1968) Electron Microscopy of Thin Crystals. Moscow, Mir Publ. 574 (in Russian).Hirsch P. B., Howie A., Nicholson R. B., Pashley D. W., Whelan M. J. (1968) Electron Microscopy of Thin Crystals. Moscow, Mir Publ. 574 (in Russian).Tomas G., Goridge M. J. (1983) Transmission Electron Microscopy of Materials. Moscow, Nauka Publ. (in Russian).Tomas G., Goridge M. J. (1983) Transmission Electron Microscopy of Materials. Moscow, Nauka Publ. (in Russian).Alberti A., Bongiorno C., Alippi P., Magna A. L., Spinella C., Rimini E. (2006) Structural Characterization of Ni2Si Pseudoepitaxial Transrotational Structures on [001] Si. Acta Crystallografica Section B. 62 (5), 729–736. https://doi.org/10.1107/S0108768106029727.Alberti A., Bongiorno C., Alippi P., Magna A. L., Spinella C., Rimini E. (2006) Structural Characterization of Ni2Si Pseudoepitaxial Transrotational Structures on [001] Si. Acta Crystallografica Section B. 62 (5), 729–736. https://doi.org/10.1107/S0108768106029727.Alberti A., Magna A. L. (2013) Role of the Early Stages of Ni-Si Interaction on the Structural Properties of the Reaction Products. Journal of Applied Physics. 114 (12). https://doi.org/10.1063/1.4818630.Alberti A., Magna A. L. (2013) Role of the Early Stages of Ni-Si Interaction on the Structural Properties of the Reaction Products. Journal of Applied Physics. 114 (12). https://doi.org/10.1063/1.4818630.

The authors declare that there are no conflicts of interest present.