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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2023-21-2-21-26</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-3596</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICS</subject></subj-group></article-categories><title-group><article-title>Влияние электрического поля на свойства гидрированного графена</article-title><trans-title-group xml:lang="en"><trans-title>Influence of the Electric Field on the Properties of Hydrogenated Graphene</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Муравьёв</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Muravyov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>чл.-кор. Национальной академии наук Беларуси, д. т. н., профессор</p><p>Минск</p></bio><bio xml:lang="en"><p>Corr. Member of the National Academy of Sciences of Belarus, Dr. of Sci. (Eng.), Professor</p><p>Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мищенко</surname><given-names>В. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Mishchenka</surname><given-names>V. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мищенко Валерий Николаевич, к. т. н., доцент</p><p>220013, г. Минск, ул. П. Бровки, 6</p><p>Тел.: +375 17 293-80-70</p></bio><bio xml:lang="en"><p>Mishchenka Valery Nikolaevich, Cand. of Sci., Associate Professor</p><p>220013, Minsk, P. Brovki St., 6</p><p>Tel.: +375 17 293-80-70</p></bio><email xlink:type="simple">mishchenko@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>24</day><month>04</month><year>2023</year></pub-date><volume>21</volume><issue>2</issue><fpage>21</fpage><lpage>26</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Муравьёв В.В., Мищенко В.Н., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Муравьёв В.В., Мищенко В.Н.</copyright-holder><copyright-holder xml:lang="en">Muravyov V.V., Mishchenka V.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/3596">https://doklady.bsuir.by/jour/article/view/3596</self-uri><abstract><p>Графен рассматривается в настоящее время как один из наиболее перспективных материалов для создания новых полупроводниковых приборов для различных диапазонов частот. Путем моделирования из первых принципов (ab initio метод) исследовано влияние внешнего электрического поля на свойства зонной диаграммы материала графана, который является модификацией графена при использовании атомов водорода. Установлено, что приложенное к структуре графана внешнее электрическое поле приводит к существенному изменению его зонных диаграмм, которое связанно с изменением их типа. При малых значениях напряженности внешнего электрического поля, приблизительно до 0,3 a.u. (1 a.u. ≈ 51,4 ⋅ 1010 В/м), наблюдаются зонные диаграммы графана с прямым минимальным зазором для долины Г между зоной проводимости и валентной зоной. С дальнейшим увеличением напряженности внешнего электрического поля зонные диаграммы демонстрируют непрямой минимальный зазор. При еще больших значениях напряженности внешнего электрического поля, которые превышают 0,8 a.u., зонные диаграммы графана приобретают вид, свойствененный металлическим структурам. Полученные зависимости и параметры графана могут служить основой для создания новых гетероструктурных приборов, содержащих слои графена и других полупроводниковых материалов. </p></abstract><trans-abstract xml:lang="en"><p>Graphene is currently considered as one of the most promising materials for the creation of new semiconductor devices for various frequency ranges. The influence of an external electric field on the properties of the band diagram of the graphene material, which is a modification of graphene using hydrogen atoms, was studied by simulating from the first principles (ab initio method). It was found that an external electric field applied to the graphene structure leads to a substantial change in its band diagrams, which is associated with a change in their type. At small values of external electric field strength, approximately up to 0.3 a.u. (1 a.u. ≈ 51.4 1010 V/m), we observe graphane zone diagrams with straight minimal gap for Г valley between conduction and valence zones. With further increase in external electric field strength the zone diagrams show indirect minimal gap. With even higher values of external electric field strength, which exceed 0.8 a.u., graphane band diagrams take on a form peculiar to metallic structures. These dependences and the resulting graphene parameters could be the basis for new heterostructure devices containing layers of graphene and other semiconductor materials. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>графен</kwd><kwd>графан</kwd><kwd>моделирование</kwd><kwd>зонная диаграмма</kwd><kwd>полупроводниковая структура</kwd></kwd-group><kwd-group xml:lang="en"><kwd>graphene</kwd><kwd>graphane</kwd><kwd>modeling</kwd><kwd>zone diagram</kwd><kwd>semiconductor structure</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Novoselov K. S., Geim A. K. et al. (2004) Electric Field Effect in Atomically Thin Carbon Films. Science. 306 (5696), 666–669. DOI: 10.1126/science.1102896.</mixed-citation><mixed-citation xml:lang="en">Novoselov K. S., Geim A. K. et al. (2004) Electric Field Effect in Atomically Thin Carbon Films. Science. 306 (5696), 666–669. 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