bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИРbsuir-338Research ArticleСтатьиELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS2KrivosheevaA. V.noemail@neicon.ruShaposhnikovV. L.noemail@neicon.ruBorisenkoV. E.noemail@neicon.ruLazzariJ. -L.noemail@neicon.ruBelarusian State University of Informatics and RadioelectronicsBelarusCentre Interdisciplinaire de Nanoscience de Marseille (CINaM)Belarus201403062019053437Copyright © Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E., Lazzari J.-., 20192019Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E., Lazzari J.-.Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E., Lazzari J.-.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/338

Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.

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The authors declare that there are no conflicts of interest present.