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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2022-20-3-5-12</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-3361</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICS</subject></subj-group></article-categories><title-group><article-title>Формирование и электрохимические свойства пленок оксидов никеля и кобальта</article-title><trans-title-group xml:lang="en"><trans-title>Formation and Electrochemical Properties of Nickel and Cobalt Transition Metals Oxide Films</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Греков</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Grekov</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Греков Игорь Александрович, инженер-электроник НИЛ 4.3 НИЧ, магистрант кафедры микро- и наноэлектроники</p><p>220013, г. Минск, ул. П. Бровки, 6тел. +375-33-667-93-28</p></bio><bio xml:lang="en"><p>Grekov I.A., Electronic Engineer at R&amp;D Laboratory 4.3, Undergraduate at the Department of Micro- and Nanoelectronics</p><p>220013, Minsk, P. Brovka St., 6tel. +375-33-667-93-28</p></bio><email xlink:type="simple">traktorzek@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Янушкевич</surname><given-names>К. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Yanushkevich</surname><given-names>K. O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Янушкевич К.О., младший научный сотрудник НИЛ 4.3 НИЧ</p><p>220013, г. Минск, ул. П. Бровки, 6</p></bio><bio xml:lang="en"><p>Yanushkevich K.O., Junior Researcher at R&amp;D Laboratory 4.3</p><p>220013, Minsk, P. Brovka St., 6</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Чубенко</surname><given-names>Е. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Chubenko</surname><given-names>E. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Чубенко Е.Б., к.т.н., доцент, ведущий научный сотрудник НИЛ 4.3 НИЧ</p><p>220013, г. Минск, ул. П. Бровки, 6</p></bio><bio xml:lang="en"><p>Chubenko E.B., Cand. of Sci., Associate Professor, Leading researcher at R&amp;D Laboratory 4.3</p><p>220013, Minsk, P. Brovka St., 6</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бондаренко</surname><given-names>В. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Bondarenko</surname><given-names>V. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Бондаренко В.П., к.т.н., доцент, зав. НИЛ 4.3 НИЧ</p><p>220013, г. Минск, ул. П. Бровки, 6</p></bio><bio xml:lang="en"><p>Bondarenko V.P., Cand. of Sci, Associated Professor, Head of R&amp;D Laboratory 4.3</p><p>220013, Minsk, P. Brovka St., 6</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>11</day><month>06</month><year>2022</year></pub-date><volume>20</volume><issue>3</issue><fpage>5</fpage><lpage>12</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Греков И.А., Янушкевич К.О., Чубенко Е.Б., Бондаренко В.П., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Греков И.А., Янушкевич К.О., Чубенко Е.Б., Бондаренко В.П.</copyright-holder><copyright-holder xml:lang="en">Grekov I.A., Yanushkevich K.O., Chubenko E.B., Bondarenko V.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/3361">https://doklady.bsuir.by/jour/article/view/3361</self-uri><abstract><p>Методом электрохимического осаждения получены пленки оксида кобальта и оксида никеля на подложках монокристаллического кремния. Проведены исследования их структуры и состава методами рамановской микроскопии и сканирующей электронной микроскопии. Результаты исследования методом рамановской спектроскопии показали, что полученные пленки представляют собой поликристаллические структуры оксида кобальта (II, III) и оксида никеля (II), кристаллическое совершенство которых возрастает с увеличением температуры электролита. Методом сканирующей электронной микроскопии было установлено, что пленки оксида никеля отличаются гладкой поверхностью, в то время как оксид кобальта обладает более развитой структурой и состоит из кристаллов пластинчатой формы. Измеренная методом вольтамперометрии удельная электрохимическая емкость пленок оксида кобальта и оксида никеля, полученных в оптимальных условиях, составила соответственно 14,67 и 1634,08 Ф/г. Высокая удельная электрохимическая емкость пленки оксида никеля может быть использована для создания эффективных электрохимических приборов и устройств накопления энергии.</p></abstract><trans-abstract xml:lang="en"><p>Films of cobalt oxide and nickel oxide on monocrystalline silicon substrates were obtained by electrochemical deposition from aqueous electrolyte solutions. Their structure and composition were studied by Raman microscopy and scanning electron microscopy. The results of the study by Raman spectroscopy showed that the obtained films are polycrystalline structures of cobalt (II, III) oxide and nickel (II) oxide, the crystalline perfection of which increases with an increase in the electrolyte temperature. It was found by scanning electron microscopy that nickel oxide films have a smoother surface, while cobalt oxide has a more developed structure consisting of lamellar crystals. The specific electrochemical capacity of cobalt oxide and nickel oxide films obtained under optimal conditions, measured by voltammetry, was 14.67 and 1634.08 F/g, respectively. The high specific electrochemical capacity of a nickel oxide film can be used to create efficient electrochemical devices and energy storage devices.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>оксид никеля</kwd><kwd>оксид кобальта</kwd><kwd>электрохимическое осаждение</kwd><kwd>рамановская спектроскопия</kwd><kwd>электрохимическая емкость</kwd></kwd-group><kwd-group xml:lang="en"><kwd>nickel oxide</kwd><kwd>cobalt oxide</kwd><kwd>electrochemical deposition</kwd><kwd>Raman spectroscopy</kwd><kwd>electrochemical capacitance</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Al-Rashdi K., Farooqui M., Mohsin M., Rabbani G. Metal oxide thin films: a mini review. 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