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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-333</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>НАПРЯЖЕННОСТЬ ЭЛЕКТРИЧЕСКОГО ПОЛЯ В БАРЬЕРНОМ СЛОЕ ПОРИСТОГО ОКСИДА АЛЮМИНИЯ ПРИ АНОДИРОВАНИИ</article-title><trans-title-group xml:lang="en"><trans-title>THE ELECTRIC FIELD STRENGTH INSIDE BARRIER LAYER OF POROUS ALUMINA DURING ANODIZING</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лазарук</surname><given-names>С. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Lazarouk</surname><given-names>S. K.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кацуба</surname><given-names>П. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Katsuba</surname><given-names>P. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Андреенко</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Andreenko</surname><given-names>A. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лешок</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Leshok</surname><given-names>A. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Якимчук</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Yakimchuk</surname><given-names>A. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Высоцкий</surname><given-names>В. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Vysotskiy</surname><given-names>V. B.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2014</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>5</issue><fpage>5</fpage><lpage>10</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Лазарук С.К., Кацуба П.С., Андреенко А.В., Лешок А.А., Якимчук А.А., Высоцкий В.Б., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Лазарук С.К., Кацуба П.С., Андреенко А.В., Лешок А.А., Якимчук А.А., Высоцкий В.Б.</copyright-holder><copyright-holder xml:lang="en">Lazarouk S.K., Katsuba P.S., Andreenko A.V., Leshok A.A., Yakimchuk A.A., Vysotskiy V.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/333">https://doklady.bsuir.by/jour/article/view/333</self-uri><abstract><p>Представлены результаты расчета электрического поля в пористом оксиде алюминия при электрохимическом анодировании в электролитах на основе водных растворов щавелевой кислоты при напряжениях от 90 до 250 В. Для расчета использовались конфигурации ячеек пористых оксидов алюминия с пористостью от 1 до 10 %. Рассмотрены новые явления и эффекты, возникающие в процессе пористого анодирования алюминия при высоких напряжениях, когда напряженность электрического поля внутри пористого оксида алюминия достигает величин 1010-1011 В/м.</p></abstract><trans-abstract xml:lang="en"><p>The electric field strength calculations inside porous alumina barrier layer during electrochemical anodizing in aqueous solutions of oxalic acid at a forming voltage of 90 to 250 V have been performed. The configuration of porous alumina cells with a porosity from 1 to 10 % have been used as the input data for calculations. It is found that the value of electric field strength inside porous alumina reaches 1010-1011 V/m. New phenomena and effects, appeared during alumina anodizing process with high forming voltages, have been analyzed.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>электрохимическое анодирование</kwd><kwd>оксид алюминия</kwd><kwd>барьерный слой</kwd><kwd>самоорганизация</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Lazarouk S., Katsouba S., Leshok A., et al. // Microelectron. Eng. 2000. Vol. 50(1-4). P. 321-327.</mixed-citation><mixed-citation xml:lang="en">Lazarouk S., Katsouba S., Leshok A., et al. // Microelectron. Eng. 2000. Vol. 50(1-4). P. 321-327.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Katsuba P., Jaguiro P., Lazarouk S., et al. // Physica E. 2009. Vol. 41. 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