bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2021-19-8-81-86bsuir-3250Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSThe proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs.The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAsLovshenkoI. Yu.LovshenkoI. Yu.

Ivan Yur’evich Lovshenko –  Head of R&D Lab. “CAD in Micro- and Nanoelectronicsˮ of R&D Department

220013, Republic of Belarus, Minsk, P. Brovka St., 6, Belarusian State University of Informatics and Radioelectronics

lovshenko@bsuir.byVoronovA. Yu.VoronovA. Yu.

Aleksei Yu. Voronov – Master's student

Minsk

RoshchenkoP. S.RoshchenkoP. S.

Polina S. Roshchenko – Master's student, Electronic Engineer at R&D Lab. “CAD in Micro- and Nanoelectronicsˮ of R&D Department

Minsk

TernovR. E.TernovR. E.

Roman E. Ternov – Master's student

Minsk

GalkinYa. D.GalkinYa. D.

Yaroslav D. Galkin – Postgraduate student, Electronics Engineer at Electronic Methods and Experiment Means Laboratory

Minsk

KuntsA. V.KuntsA. V.

Alexey V. Kunts – Postgraduate Student, Electronics Engineer at Electronic Methods and Experiment Means Laboratory

Minsk

StempitskyV. R.StempitskyV. R.

Victor R. Stempitsky – PhD., Associate Professor, Vice-Rector of Research and Development, Head of R&D Department, Scientific Supervisor of R&D Lab. “CAD in Micro- and Nanoelectronicsˮ

Minsk

BiJinshunBiJinshun

Jinshun Bi – Professor

Beijing

Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsResearch Institute for Nuclear Problems of Belarusian State UniversityResearch Institute for Nuclear Problems of Belarusian State UniversityInstitute of Microelectronics of Chinese Academy of SciencesInstitute of Microelectronics of Chinese Academy of Sciences2021030120221988186Copyright © Lovshenko I.Y., Voronov A.Y., Roshchenko P.S., Ternov R.E., Galkin Y.D., Kunts A.V., Stempitsky V.R., Bi J., 20222022Lovshenko I.Y., Voronov A.Y., Roshchenko P.S., Ternov R.E., Galkin Y.D., Kunts A.V., Stempitsky V.R., Bi J.Lovshenko I.Y., Voronov A.Y., Roshchenko P.S., Ternov R.E., Galkin Y.D., Kunts A.V., Stempitsky V.R., Bi J.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/3250

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

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The authors declare that there are no conflicts of interest present.