bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2021-19-8-50-57bsuir-3245Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSModeling AlGaN p-i-n photodiodesModeling AlGaN p-i-n photodiodesVorsinN. N.VorsinN. N.

Nikolai N. Vorsin – PhD., Associate Professor, Assistant Professor at Physics Department 

Brest

GladyshchukA. A.GladyshchuA. A.

Anatolii A. Gladyshchuk – PhD., Associate Professor, Assistant Professor at Physics Department 

Brest

KushnerT. L.KushnerT. L.

Tatsiana L. Kushner –  PhD., Associate Professor, Head of Physics Department 

Brest

TarasiukN. P.TarasiukN. P.

Nikolai Petrovich Tarasiuk – Senior Lecturer 

224017, Republic of Belarus, Brest, Moskovskaya St., 267, Brest State Technical University

phys@bstu.byChugunovS. V.ChugunovS. V.

Sergey V. Chugunov – Senior Lecturer 

Brest

BorushkoM. V.BorushkoM. V.

Marina V. Borushko – Senior Lecturer 

Brest

Brest State Technical UniversityBrest State Technical University2021030120221985057Copyright © Vorsin N.N., Gladyshchuk A.A., Kushner T.L., Tarasiuk N.P., Chugunov S.V., Borushko M.V., 20222022Vorsin N.N., Gladyshchuk A.A., Kushner T.L., Tarasiuk N.P., Chugunov S.V., Borushko M.V.Vorsin N.N., Gladyshchu A.A., Kushner T.L., Tarasiuk N.P., Chugunov S.V., Borushko M.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/3245

Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic, spectral sensitivity of the received radiation, absorption coefficient as a function of the aluminum fraction and the depletion layer thickness. To calculate the process of interaction of a semiconductor with EM radiation, we used a model based on the use of an element of the transition matrix through the carrier lifetime during spontaneous recombination. In this case, the peak sensitivity of the photodiode is from 0.08 to 0.18 A/W at wavelengths of 0.2–0.33 µm. This is in line with experimental results taken from the relevant literature.

Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic, spectral sensitivity of the received radiation, absorption coefficient as a function of the aluminum fraction and the depletion layer thickness. To calculate the process of interaction of a semiconductor with EM radiation, we used a model based on the use of an element of the transition matrix through the carrier lifetime during spontaneous recombination. In this case, the peak sensitivity of the photodiode is from 0.08 to 0.18 A/W at wavelengths of 0.2–0.33 µm. This is in line with experimental results taken from the relevant literature.

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The authors declare that there are no conflicts of interest present.