<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2021-19-8-45-49</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-3244</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICS</subject></subj-group></article-categories><title-group><article-title>Ab initio calculations of electronic band structure of CdMnS semimagnetic semiconductors</article-title><trans-title-group xml:lang="en"><trans-title>Ab initio calculations of electronic band structure of CdMnS semimagnetic semiconductors</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Mehrabova</surname><given-names>М. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Mehrabova</surname><given-names>M. А.</given-names></name></name-alternatives><bio xml:lang="en"><p>Matanat Ahmed Mehrabova  – D.Sc.,  Associated  Professor,  Leading  Researcher  </p><p>AZ1143, Azerbaijan, Baku, B.Vahabzade St., 9</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Panahov</surname><given-names>N. T.</given-names></name><name name-style="western" xml:lang="en"><surname>Panahov</surname><given-names>N. T.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Azerbaijan University of Architecture and Construction </p></bio><bio xml:lang="en"><p>Natig T. Panahov –  PhD., Associated Professor, Leading Researcher</p><p>Baku</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Hasanov</surname><given-names>N H.</given-names></name><name name-style="western" xml:lang="en"><surname>Hasanov</surname><given-names>N. H.</given-names></name></name-alternatives><bio xml:lang="en"><p>Niyazi H. Hasanov – Lecturer at the Department of Physics </p><p>Baku</p></bio><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Institute of Radiation Problems of Azerbaijan National Academy of Sciences</institution></aff><aff xml:lang="en"><institution>Institute of Radiation Problems of Azerbaijan National Academy of Sciences</institution></aff></aff-alternatives><aff xml:lang="en" id="aff-2"><institution>Azerbaijan University of Architecture and Construction</institution><country>Azerbaijan</country></aff><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Baku State University</institution></aff><aff xml:lang="en"><institution>Baku State University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>02</day><month>01</month><year>2022</year></pub-date><volume>19</volume><issue>8</issue><fpage>45</fpage><lpage>49</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Mehrabova М.А., Panahov N.T., Hasanov N.H., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Mehrabova М.А., Panahov N.T., Hasanov N.H.</copyright-holder><copyright-holder xml:lang="en">Mehrabova M.А., Panahov N.T., Hasanov N.H.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/3244">https://doklady.bsuir.by/jour/article/view/3244</self-uri><abstract><p>This work is devoted to theoretical investigations of Cd1-xMnxS semimagnetic semiconductors (SMSC). The purpose of this work was to calculate the electronic band structure of ideal and defective Cd1- xMnxS SMSC in both antiferromagnetic (AFM) and ferromagnetic (FM) phases. Ab initio, calculations are performed in the Atomistix Toolkit (ATK) program within the Density Functional Theory (DFT) and Local Spin Density Approximation (LSDA) on Double Zeta Double Polarized (DZDP) basis. We have used Hubbard U potential UMn = 3.59 eV for 3d states for Mn atoms. Supercells of 8 and 64 atoms were constructed. After the construction of Cd1-xMnxS (x = 6.25 %; 25 %) supercells and atom relaxation and optimization of the crystal structure were carried out. Electronic band structure and density of states were calculated, the total energy has been defined in antiferromagnetic (AFM) and ferromagnetic (FM) phases. Our calculations show that the band gap increases with the increase in Mn ion concentration. It has been established that Cd or S vacancy in the crystal structure leads to the change of band gap, Fermi level shifts towards the valence or conduction band.</p></abstract><trans-abstract xml:lang="en"><p>This work is devoted to theoretical investigations of Cd1-xMnxS semimagnetic semiconductors (SMSC). The purpose of this work was to calculate the electronic band structure of ideal and defective Cd1- xMnxS SMSC in both antiferromagnetic (AFM) and ferromagnetic (FM) phases. Ab initio, calculations are performed in the Atomistix Toolkit (ATK) program within the Density Functional Theory (DFT) and Local Spin Density Approximation (LSDA) on Double Zeta Double Polarized (DZDP) basis. We have used Hubbard U potential UMn = 3.59 eV for 3d states for Mn atoms. Supercells of 8 and 64 atoms were constructed. After the construction of Cd1-xMnxS (x = 6.25 %; 25 %) supercells and atom relaxation and optimization of the crystal structure were carried out. Electronic band structure and density of states were calculated, the total energy has been defined in antiferromagnetic (AFM) and ferromagnetic (FM) phases. Our calculations show that the band gap increases with the increase in Mn ion concentration. It has been established that Cd or S vacancy in the crystal structure leads to the change of band gap, Fermi level shifts towards the valence or conduction band.</p></trans-abstract><kwd-group xml:lang="en"><kwd>Ab initio calculations</kwd><kwd>DFT</kwd><kwd>semimagnetic semiconductors</kwd><kwd>electronic band structure</kwd><kwd>vacancy</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ahmed N., Nabi A., Nisar J., Tariq M., Javid M.A., Nasim M.H. First principle calculations of electronic and magnetic properties of Mn-doped CdS (zinc blende): a theoretical study. 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Journal of Radiation Researches. 2020;7(2):39-42.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
